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2N685A

Texas Instruments

2N685A by Texas Instruments

2N685A by Texas Instruments is a Silicon Controlled Rectifier with 40mA DC Gate Trigger Current, 250A Non Repetitive Peak On-state Current, and 18A Max On-state Current. It operates b/w -60 to 125°C and has a Max DC Gate Trigger Voltage of 3V. Ideal for applications requiring precise current control in electronic circuits.

Median Price

$11.370

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 10 parts In-Stock

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$11.370

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Digiode

USA . 4,562 parts In-Stock

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Vyrian

USA . 1,953 parts In-Stock

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DigiKey Marketplace

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Electronic Expediters

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Native Components

USA . 331 parts In-Stock

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$0.347

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$0.333

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Northwest PG Solutions

USA . 1,164 parts In-Stock

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$0.382

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$0.337

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Parana Technologies

USA . 1,910 parts In-Stock

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$2.085

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$2.603

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IDEA Electronic Components Group

UK . 1,291 parts In-Stock

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$2.343

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$2.109

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ChromeModa Solutions

Germany . 916 parts In-Stock

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$2.343

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$1.921

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AZTECH Wire

Italy . 831 parts In-Stock

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$13.950

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One Stop Electronics

USA . 607 parts In-Stock

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$25.100

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Microchip USA

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Corphita

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DigiPath Technology Company

USA . 352 parts In-Stock

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$2.112

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Overview

Discover the superior performance and reliability of the 2N685A by Texas Instruments, a top-of-the-line Silicon Controlled Rectifier (SCR) designed to meet your needs. With a maximum on-state current of 18A and non-repetitive peak on-state current of 250A, this product offers unmatched quality and efficiency. From industrial applications to consumer electronics, the 2N685A delivers exceptional value and benefits, making it the perfect choice for all your power control needs. Trust Texas Instruments for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 40 mA

The high gate trigger current ensures reliable turning on of the SCR, making it suitable for demanding applications where precise triggering is required.

Non Repetitive Peak On-state Current: 250 A

The high on-state current capability allows the SCR to handle large transient currents, making it suitable for high-power equipment and systems.

Maximum On-state Current: 18 A

The maximum on-state current of 18 A indicates the SCR's ability to handle continuous high currents efficiently, making it a reliable choice for various industrial applications.

Maximum Leakage Current: 1 mA

The low leakage current ensures minimal power loss when the SCR is in the off state, contributing to the overall energy efficiency of the device.

Maximum Operating Temperature: 125 °C

The high operating temperature range of up to 125°C allows the SCR to withstand harsh environmental conditions, making it suitable for applications where temperature extremes are a concern.

Trigger Device Type: SCR

Being an SCR (Silicon Controlled Rectifier), this product offers precise control over the triggering process, ensuring accurate switching and reliability in various circuit applications.

Maximum DC Gate Trigger Voltage: 3 V

The low gate trigger voltage requirement of 3V ensures efficient operation and control of the SCR, making it ideal for low-power triggering applications.

Repetitive Peak Off-state Voltage: 200 V

The high off-state voltage capability of 200V allows the SCR to withstand voltage spikes and surges, making it a reliable choice for applications exposed to high voltage transients.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us

The minimum critical rate of rise of off-state voltage of 200V/µs ensures smooth and reliable operation of the SCR under varying voltage conditions, making it suitable for dynamic load applications.

Maximum Holding Current: 50 mA

The high holding current rating of 50mA ensures stable operation of the SCR in the latching state, making it ideal for applications requiring long-term holding of the ON state.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N685A attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

40 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

250 A

Maximum On-state Current:

18 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N685A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5960-99-140-7168, 5960991407168

NIIN

991407168

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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