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2N681A

Texas Instruments

2N681A by Texas Instruments

2N681A by Texas Instruments is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 40mA, Non Repetitive Peak On-state Current of 250A, and Max On-state Current of 18A. It operates b/w -60 to 125°C and has a Repetitive Peak Off-state Voltage of 25V. Ideal for applications requiring precise current control in varying temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 3,965 parts In-Stock

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Vyrian

USA . 3,828 parts In-Stock

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DigiKey Marketplace

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Native Components

USA . 865 parts In-Stock

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$0.136

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$0.131

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Northwest PG Solutions

USA . 1,221 parts In-Stock

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$0.150

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Parana Technologies

USA . 337 parts In-Stock

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$4.262

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$4.694

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ChromeModa Solutions

Germany . 1,442 parts In-Stock

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$4.789

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$3.927

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IDEA Electronic Components Group

UK . 1,159 parts In-Stock

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$4.310

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One Stop Electronics

USA . 549 parts In-Stock

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AZTECH Wire

Italy . 643 parts In-Stock

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Microchip USA

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Corphita

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DigiPath Technology Company

USA . 619 parts In-Stock

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Overview

Unlock the power of electronics with the 2N681A by Texas Instruments. As a leader in semiconductor manufacturing, Texas Instruments guarantees top-quality products that deliver outstanding performance. The 2N681A is a Silicon Controlled Rectifier (SCR) that offers reliability and durability for a wide range of applications. With a maximum on-state current of 18 A and a trigger device type of SCR, this product provides unmatched value and benefits to customers seeking high-quality components for their projects. Trust Texas Instruments for all your semiconductor needs.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 40 mA

A high gate trigger current ensures reliable and efficient switching of the SCR, allowing for precise control.

Non Repetitive Peak On-state Current: 250 A

The high non-repetitive peak on-state current capability makes this SCR suitable for handling high power loads without risk of damage.

Maximum On-state Current: 18 A

With a maximum on-state current of 18 A, this SCR can handle moderate power requirements effectively.

Maximum Leakage Current: 1 mA

Low leakage current ensures minimal power loss when the SCR is in the off-state, improving overall efficiency.

Maximum Operating Temperature: 125 °C

The SCR can operate at high temperatures without performance degradation, making it suitable for demanding industrial applications.

Trigger Device Type: SCR

Being an SCR, it offers high reliability and robust performance in various switching applications.

Maximum DC Gate Trigger Voltage: 3 V

The low gate trigger voltage requirement of 3V ensures compatibility with a wide range of control circuitry.

Repetitive Peak Off-state Voltage: 25 V

The repetitive peak off-state voltage rating of 25V makes this SCR ideal for low voltage applications where precise switching is required.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us

The fast critical rate of rise of off-state voltage allows for quick and efficient switching, reducing the risk of voltage spikes.

Maximum Holding Current: 50 mA

The high holding current rating ensures that the SCR remains in the on-state even under varying load conditions, enhancing stability.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N681A attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

40 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

250 A

Maximum On-state Current:

18 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

25 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N681A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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