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2N689

Texas Instruments

2N689 by Texas Instruments

The Texas Instruments 2N689 is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 30mA, Non Repetitive Peak On-state Current of 150A, and Max On-state Current of 16A. It operates b/w -60°C to 125°C, suitable for applications requiring high current switching such as power control systems.

Median Price

$190.995

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

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Newark

USA . 4 parts In-Stock

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$9.910

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$9.230

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$9.060

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$9.910

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$9.060

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Element14

Singapore . 4 parts In-Stock

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$372.080

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$281.560

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$255.760

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$372.080

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Bristol Electronics

USA . 2 parts In-Stock

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$10.500

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TEDSS.com

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$12.500

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Vyrian

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Elite Semiconductor

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Digiode

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Anansix

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PUI

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100

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Area51 Electronics

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Prism Electronics

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DF Sales Co.

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DF Sales Co.

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Electro Mavin

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DigiKey Marketplace

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Electronic Expediters

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Resion

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Manoshevitz Elec. Sales

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LittleDiode

UK . 5 parts In-Stock

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Lakeview Electronics

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M&R Communications

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Elcom Components

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Native Components

USA . 1,299 parts In-Stock

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$0.229

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$0.220

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$0.229

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Northwest PG Solutions

USA . 1,908 parts In-Stock

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$0.252

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$0.223

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$0.252

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ChromeModa Solutions

Germany . 1,019 parts In-Stock

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$2.368

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$1.942

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IDEA Electronic Components Group

UK . 2,009 parts In-Stock

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$3.721

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$3.349

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DigiPath Technology Company

USA . 1,777 parts In-Stock

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$6.998

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MKK Technologies

India . 1,495 parts In-Stock

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One Stop Electronics

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AZTECH Wire

Italy . 441 parts In-Stock

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Microchip USA

USA . 4,753 parts In-Stock

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Corphita

USA . 3,295 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Parana Technologies

USA . 1,262 parts In-Stock

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$4.450

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Perfect Parts

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Component Stockers USA

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Overview

Unlock the power of reliable performance with the 2N689 Silicon Controlled Rectifier by Texas Instruments. Designed for efficiency and durability, this SCR offers unmatched quality and precision. Ideal for a variety of applications, this product delivers exceptional value and benefits to customers seeking high-performance components. Trust in Texas Instruments for superior technology that exceeds expectations.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 30 mA

The low gate trigger current requirement allows for efficient and precise control of the SCR, making this product suitable for applications requiring precise triggering.

Non Repetitive Peak On-state Current: 150 A

The high non repetitive peak on-state current capability ensures that the SCR can handle sudden high current surges, making it ideal for high-power applications.

Maximum On-state Current: 16 A

The maximum on-state current of 16 A allows for the SCR to handle moderate current loads, making it versatile for a range of applications.

Maximum Leakage Current: 3 mA

The low leakage current ensures minimal wasted power when the SCR is in the off-state, improving overall efficiency.

Maximum Operating Temperature: 125 °C

The high operating temperature tolerance of 125°C allows the SCR to operate reliably in harsh environments without overheating.

Trigger Device Type: SCR

Being an SCR (Silicon Controlled Rectifier), this product offers precise control over the switching of the current flow, making it a reliable choice for many applications.

Minimum Operating Temperature: -60 °C

The wide operating temperature range from -60°C to 125°C enables the SCR to function effectively in both extremely cold and hot environments.

Maximum DC Gate Trigger Voltage: 3 V

The low gate trigger voltage requirement of 3 V allows for easy and efficient triggering of the SCR, enhancing its usability in various circuits.

Repetitive Peak Off-state Voltage: 500 V

The high repetitive peak off-state voltage rating of 500 V ensures that the SCR can handle high voltage applications with reliability.

Maximum Holding Current: 50 mA

The maximum holding current of 50 mA ensures that the SCR can maintain its on-state state even after the gate trigger signal is removed, providing stable operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N689 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

3 mA

Non Repetitive Peak On-state Current:

150 A

Maximum On-state Current:

16 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

500 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N689 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-226-8697, 5961002268697, 5961-00-850-8448, 5961008508448, 5961-14-228-2802, 5961142282802

NIIN

002268697, 008508448, 142282802

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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