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2N682A

Texas Instruments

2N682A by Texas Instruments

2N682A by Texas Instruments is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 40mA, Non Repetitive Peak On-state Current of 250A, and Max On-state Current of 18A. It operates b/w -60 to 125°C and is used as a trigger device in various applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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DigiKey

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Vyrian

USA . 5,304 parts In-Stock

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Digiode

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DigiKey Marketplace

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Parana Technologies

USA . 1,663 parts In-Stock

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$3.129

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$3.650

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ChromeModa Solutions

Germany . 4,665 parts In-Stock

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$3.516

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$2.883

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IDEA Electronic Components Group

UK . 1,584 parts In-Stock

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$3.164

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Microchip USA

USA . 3,803 parts In-Stock

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$18.200

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Corphita

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Northwest PG Solutions

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DigiPath Technology Company

USA . 481 parts In-Stock

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Native Components

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Component Stockers USA

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Assy Fe

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Overview

Unleash the power of Texas Instruments with the 2N682A Silicon Controlled Rectifier! Designed for reliability and performance, this SCR offers unparalleled quality and durability in a wide range of applications. From industrial machinery to consumer electronics, this versatile component delivers exceptional value and benefits to customers seeking efficiency and precision in their projects. Trust Texas Instruments for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 40 mA

Allows for efficient and precise control of the SCR, ensuring reliable performance.

Non Repetitive Peak On-state Current: 250 A

Capable of handling high current spikes without causing damage to the SCR.

Maximum On-state Current: 18 A

Suitable for a wide range of applications that require moderate current handling capabilities.

Maximum Leakage Current: 1 mA

Provides low power consumption and reduces the risk of damage to other components in the circuit.

Maximum Operating Temperature: 125 °C

Can operate in high-temperature environments without compromising performance.

Minimum Operating Temperature: -60 °C

Can withstand low-temperature conditions, making it suitable for a variety of operating environments.

Maximum DC Gate Trigger Voltage: 3 V

Requires low voltage for triggering, enhancing energy efficiency and control.

Repetitive Peak Off-state Voltage: 50 V

Capable of blocking high voltages when the SCR is in the off state, ensuring safety and protection of other components.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us

Quick response to changes in voltage levels, providing effective protection against voltage surges.

Maximum Holding Current: 50 mA

Maintains conduction in the SCR after triggering, ensuring stability in the circuit.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N682A attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

40 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

250 A

Maximum On-state Current:

18 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

50 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N682A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-900-3501, 5961009003501

NIIN

009003501

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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