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2N687A

Texas Instruments

2N687A by Texas Instruments

2N687A by Texas Instruments is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 40mA, Non Repetitive Peak On-state Current of 250A, and Max On-state Current of 18A. It operates b/w -60 to 125°C and has a Repetitive Peak Off-state Voltage of 300V. Ideal for power control applications.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Vyrian

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Digiode

USA . 3,563 parts In-Stock

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DigiKey Marketplace

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Electronic Expediters

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Native Components

USA . 451 parts In-Stock

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$0.556

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Northwest PG Solutions

USA . 981 parts In-Stock

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Parana Technologies

USA . 1,175 parts In-Stock

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DigiPath Technology Company

USA . 332 parts In-Stock

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$4.761

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ChromeModa Solutions

Germany . 4,205 parts In-Stock

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IDEA Electronic Components Group

UK . 608 parts In-Stock

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Microchip USA

USA . 4,725 parts In-Stock

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AZTECH Wire

Italy . 415 parts In-Stock

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One Stop Electronics

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Corphita

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Overview

Unleash the power of the 2N687A by Texas Instruments, a top-of-the-line Silicon Controlled Rectifier (SCR) designed for maximum performance and reliability. Manufactured by industry leader Texas Instruments, this SCR offers unmatched quality and precision in a wide range of applications. With a maximum DC Gate Trigger Current of 40 mA and Non Repetitive Peak On-state Current of 250 A, this SCR delivers exceptional functionality and efficiency. Trust in Texas Instruments to provide you with the best-in-class components for your electronic projects.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 40 mA

With a high maximum DC gate trigger current, this SCR can be easily controlled and triggered without requiring high power inputs.

Non Repetitive Peak On-state Current: 250 A

The non-repetitive peak on-state current of 250 A allows this SCR to handle high current surges efficiently, making it suitable for heavy-duty applications.

Maximum On-state Current: 18 A

The maximum on-state current of 18 A indicates the capability of this SCR to handle moderate current loads for a variety of applications.

Maximum Leakage Current: 1 mA

With a low maximum leakage current of 1 mA, this SCR exhibits excellent control over current flow when in the off-state, ensuring energy efficiency.

Maximum Operating Temperature: 125 °C

Being able to operate at a maximum temperature of 125°C, this SCR can withstand high-temperature environments without performance degradation.

Trigger Device Type: SCR

As an SCR, this product offers fast and reliable switching capabilities, making it a reliable choice for applications requiring precise control over current flow.

Minimum Operating Temperature: -60 °C

The wide temperature range from -60°C to 125°C ensures that this SCR can function effectively in both low and high-temperature environments.

Maximum DC Gate Trigger Voltage: 3 V

With a low maximum DC gate trigger voltage of 3 V, this SCR can be easily triggered with low power requirements, enhancing energy efficiency.

Repetitive Peak Off-state Voltage: 300 V

The repetitive peak off-state voltage of 300 V allows this SCR to handle high voltage applications with ease, making it a versatile choice for various electronic circuits.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us

The minimum critical rate of rise of off-state voltage of 200 V/us indicates the SCR's ability to handle rapid changes in voltage, ensuring stable performance in dynamic environments.

Maximum Holding Current: 50 mA

With a maximum holding current of 50 mA, this SCR can maintain its on-state conduction without requiring excessive current, making it efficient and reliable in continuous operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N687A attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

40 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

250 A

Maximum On-state Current:

18 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

300 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N687A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-905-1104, 5961009051104

NIIN

009051104

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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