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2N3940

Texas Instruments

2N3940 by Texas Instruments

2N3940 by Texas Instruments is a Silicon Controlled Rectifier with 60mA DC Gate Trigger Current, 100A Non Repetitive Peak On-state Current, and 7A Max On-state Current. It operates b/w -65°C to 125°C and has a max DC Gate Trigger Voltage of 3.2V. Ideal for applications requiring high current handling capabilities like power supplies and motor control systems.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Vyrian

USA . 5,093 parts In-Stock

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Digiode

USA . 571 parts In-Stock

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Electronic Expediters

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Resion

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Parana Technologies

USA . 1,729 parts In-Stock

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$1.820

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$2.373

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IDEA Electronic Components Group

UK . 2,058 parts In-Stock

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$2.045

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$1.840

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ChromeModa Solutions

Germany . 1,319 parts In-Stock

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$2.045

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$1.677

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AZTECH Wire

Italy . 524 parts In-Stock

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$10.203

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Native Components

USA . 647 parts In-Stock

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$24.910

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Northwest PG Solutions

USA . 1,937 parts In-Stock

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$27.401

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$24.661

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One Stop Electronics

USA . 1,253 parts In-Stock

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$28.100

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Authorized Procurement Solutions

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DigiPath Technology Company

USA . 633 parts In-Stock

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$1.844

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Corphita

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Overview

Unlock the power of innovation with the 2N3940 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch quality and reliability in their Silicon Controlled Rectifiers (SCR). Ideal for a wide range of applications, this SCR offers high performance and efficiency. Experience seamless operation and enhanced productivity with the 2N3940, providing unmatched value and benefits to meet your needs. Elevate your projects with Texas Instruments' cutting-edge technology and trust in the superior capabilities of the 2N3940.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 60 mA

This spec ensures efficient triggering of the SCR, allowing for precise control of the on-state current.

Non Repetitive Peak On-state Current: 100 A

The high peak on-state current capability makes this SCR suitable for handling surge currents and overloads without getting damaged.

Maximum On-state Current: 7 A

With a maximum on-state current of 7A, this SCR is suitable for a wide range of applications requiring moderate current handling capacity.

Maximum Leakage Current: 1 mA

The low leakage current ensures minimal power loss when the SCR is in the off state, contributing to overall efficiency.

Maximum Operating Temperature: 125 °C

The high operating temperature range allows for reliable performance in various environmental conditions.

Trigger Device Type: SCR

Being an SCR, this device offers excellent control over current flow and is widely used in power control applications.

Maximum DC Gate Trigger Voltage: 3.2 V

The low trigger voltage requirement of 3.2V ensures efficient operation and compatibility with different control circuitry.

Repetitive Peak Off-state Voltage: 500 V

The high off-state voltage rating makes this SCR suitable for high voltage applications where reliable switching is required.

Maximum Holding Current: 110 mA

The holding current rating of 110 mA ensures that the SCR remains in the on state even in the presence of small disturbances, improving stability.

Nominal Circuit Commutated Turn-off Time: 8 us

The quick turn-off time of 8 us allows for rapid switching and control, making this SCR ideal for high-speed applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N3940 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Nominal Circuit Commutated Turn-off Time:

8 us

Maximum DC Gate Trigger Current:

60 mA

Maximum DC Gate Trigger Voltage:

3.2 V

Maximum Holding Current:

110 mA

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

100 A

Maximum On-state Current:

7 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

500 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N3940 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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