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2N3937

Texas Instruments

2N3937 by Texas Instruments

2N3937 by Texas Instruments is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 60mA, Non Repetitive Peak On-state Current of 100A, and Max On-state Current of 7A. It is used in applications requiring SCR technology such as power control circuits due to its high performance and reliability.

Median Price

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Lifecycle Status

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3

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1k+

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Vyrian

USA . 7,882 parts In-Stock

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Digiode

USA . 146 parts In-Stock

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Electronic Expediters

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Native Components

USA . 124 parts In-Stock

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$0.796

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Northwest PG Solutions

USA . 2,076 parts In-Stock

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$0.876

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Parana Technologies

USA . 914 parts In-Stock

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$3.526

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$4.050

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914

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ChromeModa Solutions

Germany . 793 parts In-Stock

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$3.962

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$3.249

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IDEA Electronic Components Group

UK . 101 parts In-Stock

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$3.566

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AZTECH Wire

Italy . 773 parts In-Stock

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One Stop Electronics

USA . 193 parts In-Stock

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Corphita

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DigiPath Technology Company

USA . 1,267 parts In-Stock

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Overview

Looking for a reliable solution for your power control needs? Look no further than the 2N3937 by Texas Instruments. With a reputation for producing high-quality components, Texas Instruments delivers once again with this Silicon Controlled Rectifier (SCR). Whether you're in need of precise gate triggering or efficient power regulation, the 2N3937 has you covered. From industrial applications to consumer electronics, this versatile component offers unmatched performance and reliability. Experience the value and benefits of Texas Instruments' expertise with the 2N3937 SCR.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 60 mA

This ensures precise control over the SCR, allowing for efficient and reliable operation.

Non Repetitive Peak On-state Current: 100 A

Capable of handling high peak currents, making it suitable for demanding industrial applications.

Maximum On-state Current: 7 A

Provides a good balance between current handling capability and efficiency for various circuits.

Maximum Leakage Current: 1 mA

Low leakage current helps in reducing power losses and improving overall efficiency.

Maximum Operating Temperature: 125 °C

Can operate reliably at high temperatures, suitable for industrial environments.

Trigger Device Type: SCR

SCRs offer high reliability and robustness compared to other semiconductor devices.

Maximum DC Gate Trigger Voltage: 3.2 V

Low gate trigger voltage ensures efficient triggering and control over the SCR.

Repetitive Peak Off-state Voltage: 200 V

Capable of handling high off-state voltages, making it versatile for different applications.

Maximum Holding Current: 110 mA

Ensures the SCR remains in the conducting state without requiring continuous gate current.

Nominal Circuit Commutated Turn-off Time: 8 us

Fast turn-off time allows for rapid switching and control, enhancing the performance of the device.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N3937 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Nominal Circuit Commutated Turn-off Time:

8 us

Maximum DC Gate Trigger Current:

60 mA

Maximum DC Gate Trigger Voltage:

3.2 V

Maximum Holding Current:

110 mA

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

100 A

Maximum On-state Current:

7 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N3937 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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