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2N3939

Texas Instruments

2N3939 by Texas Instruments

2N3939 by Texas Instruments is a Silicon Controlled Rectifier with 60mA DC Gate Trigger Current, 100A Non Repetitive Peak On-state Current, and 7A Max On-state Current. It operates b/w -65°C to 125°C and has a max DC Gate Trigger Voltage of 3.2V. Ideal for applications requiring precise current control in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,264 parts In-Stock

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Digiode

USA . 1,562 parts In-Stock

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Parana Technologies

USA . 123 parts In-Stock

1+ parts

$3.495

100+ parts

$324.567

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$3.146

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123

$3.495

$324.567

$3.146

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DigiPath Technology Company

USA . 1,030 parts In-Stock

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$3.848

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$3.848

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ChromeModa Solutions

Germany . 1,232 parts In-Stock

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$3.927

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$3.220

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$3.927

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IDEA Electronic Components Group

UK . 718 parts In-Stock

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$3.927

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$3.534

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718

$3.927

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$3.534

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AZTECH Wire

Italy . 757 parts In-Stock

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$7.276

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757

$7.276

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Semicontronic

India . 544 parts In-Stock

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$17.100

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$16.672

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$16.587

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544

$17.100

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$16.587

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Ampacity Inc.

Singapore . 434 parts In-Stock

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$22.100

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Native Components

USA . 709 parts In-Stock

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$26.200

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709

$26.200

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Northwest PG Solutions

USA . 1,670 parts In-Stock

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$28.820

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$25.938

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1,670

$28.820

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One Stop Electronics

USA . 1,530 parts In-Stock

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$29.100

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Corphita

USA . 1,347 parts In-Stock

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Corohmni

South Africa . 374 parts In-Stock

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Overview

Unlock your electronics potential with the 2N3939 by Texas Instruments, a top-of-the-line Silicon Controlled Rectifier. Trusted by professionals worldwide, Texas Instruments delivers unmatched quality and reliability. Perfect for power control applications, this SCR offers maximum performance and efficiency. Take your projects to the next level with the value and benefits that only the 2N3939 can provide.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 60 mA

Having a high maximum trigger current allows for reliable gate triggering, ensuring the SCR operates effectively and consistently.

Non Repetitive Peak On-state Current: 100 A

The SCR can handle high peak currents without causing damage, making it suitable for demanding applications where high current spikes may occur.

Maximum On-state Current: 7 A

With a maximum on-state current of 7A, this SCR can handle moderate current loads, making it versatile for a range of applications.

Maximum Leakage Current: 1 mA

Low leakage current ensures minimal power loss when the SCR is in the off state, improving efficiency and reducing heat dissipation.

Maximum Operating Temperature: 125 °C

Operating at up to 125°C allows for use in high temperature environments without compromising performance, increasing the SCR's versatility.

Minimum Operating Temperature: -65 °C

The SCR can operate in extremely cold conditions down to -65°C, making it suitable for a wide range of environments and applications.

Maximum DC Gate Trigger Voltage: 3.2 V

Low gate trigger voltage requirements make the SCR easy to control and integrate into circuits, enhancing its usability.

Repetitive Peak Off-state Voltage: 400 V

A high off-state voltage rating of 400V ensures the SCR can withstand voltage spikes and overloads, improving reliability and longevity.

Maximum Holding Current: 110 mA

Having a high holding current rating ensures the SCR remains in the on state reliably, providing stable operation in continuous conduction applications.

Nominal Circuit Commutated Turn-off Time: 8 us

A fast turn-off time of 8us allows for rapid switching and control of the SCR, making it suitable for high-speed applications where quick response times are crucial.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N3939 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Nominal Circuit Commutated Turn-off Time:

8 us

Maximum DC Gate Trigger Current:

60 mA

Maximum DC Gate Trigger Voltage:

3.2 V

Maximum Holding Current:

110 mA

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

100 A

Maximum On-state Current:

7 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N3939 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-485-9055, 5961004859055

NIIN

004859055

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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