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TT260N22KOFHPSA1

Infineon Technologies

TT260N22KOFHPSA1 by Infineon Technologies

TT260N22KOFHPSA1 by Infineon Technologies is a Silicon Controlled Rectifier (SCR) with a max DC Gate Trigger Current of 200mA. It features a Repetitive Peak Reverse Voltage of 2200V and Max RMS On-state Current of 450A. This SCR is commonly used in applications requiring high voltage and current control, such as industrial power supplies and motor drives.

Median Price

$241.980

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 900 parts In-Stock

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$241.980

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900

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Vyrian

USA . 5,856 parts In-Stock

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Digiode

USA . 591 parts In-Stock

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Ampacity Inc.

Singapore . 745 parts In-Stock

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$0.100

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745

$0.100

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Modulus Dynamics

Lithuania . 395 parts In-Stock

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$2.611

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$2.507

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$2.402

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$2.611

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AZTECH Wire

Italy . 236 parts In-Stock

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$16.722

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Continental Prestige Electronics

USA . 1,998 parts In-Stock

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$241.980

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$237.140

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Netroflash

USA . 1,000 parts In-Stock

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$241.980

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Microchip USA

USA . 6,791 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,238 parts In-Stock

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Argo Parts USA

USA . 2,473 parts In-Stock

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Corphita

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Overview

Unleash the power of Infineon Technologies' TT260N22KOFHPSA1 Silicon Controlled Rectifier (SCR) for your electronic applications. With a maximum RMS on-state current of 450 A and a repetitive peak reverse voltage of 2200 V, this SCR offers unmatched quality and reliability. Ideal for high-power systems, this SCR features a series connected, center tap configuration with 2 elements, ensuring optimal performance. Whether you're in the industrial, automotive, or consumer electronics industry, this UL recognized device will enhance your products with its superior efficiency and durability. Upgrade to the TT260N22KOFHPSA1 and experience the difference that top-notch technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the SCR, ensuring a long lifespan and reliable performance.

Maximum DC Gate Trigger Current: 200 mA

With a high trigger current capacity, this SCR can easily be controlled and activated according to specific requirements in various applications.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

The series connected configuration with center tap design and 2 elements allows for efficient power management and distribution in circuits.

Repetitive Peak Reverse Voltage: 2200 V

A high reverse voltage capability ensures reliable operation and protection against voltage surges or fluctuations in the system.

Maximum RMS On-state Current: 450 A

This high current rating enables the SCR to handle heavy loads and power levels with ease, making it suitable for industrial and high-power applications.

Maximum Operating Temperature: 125 °C

The SCR can operate effectively at high temperatures without compromising its performance, making it suitable for a wide range of environments and applications.

Repetitive Peak Off-state Voltage: 2200 V

The high off-state voltage rating ensures reliable insulation and protection against voltage spikes or disturbances in the system.

Reference Standard: UL RECOGNIZED

Being UL Recognized means that the SCR meets safety and quality standards set by Underwriters Laboratories, giving users peace of mind regarding its performance and reliability.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TT260N22KOFHPSA1 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Infineon Technologies

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

Maximum DC Gate Trigger Current:

200 mA

JESD-30 Code:

R-PUFM-X7

No. of Elements:

2

No. of Terminals:

7

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

450 A

Reference Standard:

UL RECOGNIZED

Repetitive Peak Off-state Voltage:

2200 V

Repetitive Peak Reverse Voltage:

2200 V

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TT260N22KOFHPSA1 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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