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2N1771

Texas Instruments

2N1771 by Texas Instruments

2N1771 by Texas Instruments is a Silicon Controlled Rectifier with 15mA DC Gate Trigger Current, 60A Non Repetitive Peak On-state Current, and 4.7A Max On-state Current. It operates b/w -65°C to 125°C and is ideal for applications requiring high current switching capabilities in various electronic circuits.

Median Price

$14.568

Lifecycle Status

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In-Stock Inventory

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Bristol Electronics

USA . 887 parts In-Stock

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$12.604

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American Microsemiconductor Inc.

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Digiode

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Vyrian

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PUI

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Anansix

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Holdelec - ElecDif-Pro

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ACDS - Activité Composants Distribution Service

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DigiKey Marketplace

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Semi Source

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Electronic Expediters

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MISTER SPROCKETS

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NAC Semi

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Sunrise Surplus Inc.

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ECAB

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IDEA Electronic Components Group

UK . 3,552 parts In-Stock

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$3.105

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$2.794

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ChromeModa Solutions

Germany . 5,604 parts In-Stock

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$4.164

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$3.414

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DigiPath Technology Company

USA . 1,724 parts In-Stock

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$5.839

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MKK Technologies

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AZTECH Wire

Italy . 624 parts In-Stock

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Microchip USA

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One Stop Electronics

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QUARKTWIN TECHNOLOGY LTD

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Corphita

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Parana Technologies

USA . 3,931 parts In-Stock

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Northwest PG Solutions

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Native Components

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Assy Fe

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Overview

Elevate your electronics projects with the 2N1771 by Texas Instruments, a top-quality Silicon Controlled Rectifier (SCR) that delivers reliable performance and durability. Known for their innovative technology and superior manufacturing processes, Texas Instruments ensures that every component meets the highest standards. The 2N1771 is perfect for a variety of applications, from power supplies to motor control systems. With its maximum DC Gate Trigger Current of 15 mA and Non Repetitive Peak On-state Current of 60 A, this SCR provides unmatched efficiency and precision. Trust Texas Instruments to provide you with the best components for your projects.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 15 mA

Low gate trigger current allows for precise control over the switching of the SCR, resulting in reliable performance.

Non Repetitive Peak On-state Current: 60 A

High peak on-state current capability ensures that the SCR can handle short-term overloads without damage.

Maximum On-state Current: 4.7 A

Moderate on-state current rating enables the SCR to be used in various applications without exceeding its current handling capacity.

Maximum Leakage Current: 9 mA

Low leakage current helps in reducing power losses and improving efficiency of the device.

Maximum Operating Temperature: 125 °C

High operating temperature range allows the SCR to operate reliably in a wide range of temperature conditions.

Trigger Device Type: SCR

Being an SCR (Silicon Controlled Rectifier), this product offers controllability and efficiency in switching AC power to DC power.

Minimum Operating Temperature: -65 °C

Wide temperature range from -65°C to 125°C enables the SCR to be used in both extreme cold and hot environments.

Maximum RMS On-state Current: 7.4 A

High RMS on-state current rating indicates the SCR's ability to handle continuous current without overheating.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage ensures that the SCR can be easily controlled with low-power gate signals.

Repetitive Peak Off-state Voltage: 50 V

High off-state voltage rating allows the SCR to block voltage when turned off, ensuring safety and reliability in the circuit.

Maximum Holding Current: 50 mA

Holding current capability ensures that the SCR remains in the on-state even after the gate signal is removed, preventing accidental turn-off.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1771 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

9 mA

Non Repetitive Peak On-state Current:

60 A

No. of Elements:

1

Maximum On-state Current:

4.7 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Qualification:

Not Qualified

Maximum RMS On-state Current:

7.4 A

Repetitive Peak Off-state Voltage:

50 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1771 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5960-99-197-4259, 5960991974259, 5961-00-082-4006, 5961000824006, 5961-00-967-4980, 5961009674980, 5961-14-273-0335, 5961142730335

NIIN

991974259, 000824006, 009674980, 142730335

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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