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2N1777

Texas Instruments

2N1777 by Texas Instruments

2N1777 by Texas Instruments is a Silicon Controlled Rectifier with 15mA DC Gate Trigger Current, 60A Non Repetitive Peak On-state Current, and 4.7A Max On-state Current. It operates b/w -65 to 125°C and has a max DC Gate Trigger Voltage of 1.5V. Ideal for applications requiring precise current control in various electronic circuits.

Median Price

$13.656

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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DigiKey

USA . 50 parts In-Stock

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Freelance Electronics

USA . 40 parts In-Stock

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$7.328

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$7.695

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$7.255

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40

$7.328

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Bristol Electronics

USA . 350 parts In-Stock

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$13.656

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$12.604

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$11.198

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$13.656

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$11.198

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American Microsemiconductor Inc.

USA . 18 parts In-Stock

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$13.750

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Digiode

USA . 4,432 parts In-Stock

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Vyrian

USA . 3,535 parts In-Stock

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Anansix

USA . 1,130 parts In-Stock

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Electronic Expediters

USA . 68 parts In-Stock

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DigiKey Marketplace

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ACDS - Activité Composants Distribution Service

France . 38 parts In-Stock

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ComSIT Distribution GmbH

Germany . 8 parts In-Stock

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ComSIT USA

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Component Electronics Inc.

Canada . 2 parts In-Stock

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DF Sales Co.

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DF Sales Co.

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PUI

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Distributors (Availability)

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Native Components

USA . 981 parts In-Stock

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$0.044

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$0.042

981

$0.044

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$0.042

IDEA Electronic Components Group

UK . 470 parts In-Stock

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$3.633

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$3.270

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470

$3.633

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ChromeModa Solutions

Germany . 1,364 parts In-Stock

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$4.268

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$3.500

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$4.268

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DigiPath Technology Company

USA . 1,732 parts In-Stock

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$6.832

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$6.832

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MKK Technologies

India . 844 parts In-Stock

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$6.832

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QUARKTWIN TECHNOLOGY LTD

USA . 23,804 parts In-Stock

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Corphita

USA . 7,865 parts In-Stock

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Microchip USA

USA . 4,064 parts In-Stock

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Parana Technologies

USA . 3,203 parts In-Stock

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$4.344

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Northwest PG Solutions

USA . 1,994 parts In-Stock

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Overview

Unlock the power of reliable performance with the 2N1777 by Texas Instruments. As a trusted leader in semiconductor technology, Texas Instruments delivers quality products that exceed expectations. The 2N1777 falls under the category of Silicon Controlled Rectifiers (SCR), offering maximum DC Gate Trigger Current of 15 mA and Non Repetitive Peak On-state Current of 60 A. Ideal for a wide range of applications, this SCR provides exceptional value with its maximum On-state Current of 4.7 A and Maximum Leakage Current of 2 mA. Trust Texas Instruments to deliver superior solutions for your electronic needs.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 15 mA

Low gate trigger current allows for efficient control of the SCR, leading to improved performance and longer lifespan of the product.

Non Repetitive Peak On-state Current: 60 A

High peak on-state current capability makes this SCR suitable for applications that require handling of high currents without compromising on reliability.

Maximum On-state Current: 4.7 A

With a high maximum on-state current rating, this SCR can effectively handle moderate current loads, ensuring stability in operation.

Maximum Leakage Current: 2 mA

Low leakage current minimizes power loss and enhances the efficiency of the SCR in various applications.

Maximum Operating Temperature: 125 °C

Wide operating temperature range ensures reliable performance in harsh environmental conditions, making it a versatile choice for different applications.

Trigger Device Type: SCR

Being an SCR, this product offers precise control over switching operations, making it suitable for applications requiring accurate and efficient power management.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage requirement simplifies the control circuit design and improves the overall efficiency of the system.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage rating ensures robust performance and application versatility, making this SCR suitable for a wide range of voltage requirements.

Maximum Holding Current: 50 mA

Sufficient holding current ensures stable operation and prevents unintended turn-off, adding to the reliability and safety of the product.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1777 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

60 A

Maximum On-state Current:

4.7 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1777 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-905-0681, 5961009050681, 5961-14-347-3407, 5961143473407

NIIN

009050681, 143473407

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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