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2N1773A

Texas Instruments

2N1773A by Texas Instruments

2N1773A by Texas Instruments is a Silicon Controlled Rectifier with 15mA DC Gate Trigger Current, 60A Non Repetitive Peak On-state Current, and 4.7A Max On-state Current. It operates b/w -65 to 155°C and has a max DC Gate Trigger Voltage of 1.5V. Ideal for applications requiring precise current control in various temperature conditions.

Median Price

$13.656

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Bristol Electronics

USA . 648 parts In-Stock

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$13.656

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$12.604

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$11.198

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Vyrian

USA . 2,881 parts In-Stock

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Digiode

USA . 1,427 parts In-Stock

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Electronic Expediters

USA . 39 parts In-Stock

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Parana Technologies

USA . 1,308 parts In-Stock

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$2.471

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$2.964

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DigiPath Technology Company

USA . 1,494 parts In-Stock

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$2.720

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$2.503

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1,494

$2.720

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ChromeModa Solutions

Germany . 1,411 parts In-Stock

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$2.776

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$2.276

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$2.776

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IDEA Electronic Components Group

UK . 496 parts In-Stock

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$2.776

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$2.498

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496

$2.776

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AZTECH Wire

Italy . 510 parts In-Stock

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$6.521

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510

$6.521

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One Stop Electronics

USA . 992 parts In-Stock

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$10.100

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$10.100

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Native Components

USA . 644 parts In-Stock

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$15.660

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Northwest PG Solutions

USA . 52 parts In-Stock

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$17.226

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$15.503

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Corphita

USA . 4,884 parts In-Stock

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Overview

Unlock the power of precision and reliability with the 2N1773A by Texas Instruments. As a trusted manufacturer in the industry, Texas Instruments delivers top-quality Silicon Controlled Rectifiers (SCR) that are perfect for a wide range of applications. From industrial to consumer electronics, this SCR offers exceptional performance with a maximum DC Gate Trigger Current of 15 mA and a Non Repetitive Peak On-state Current of 60 A. Trust in Texas Instruments to provide the cutting-edge technology you need to take your projects to the next level.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 15 mA

Low gate trigger current allows for efficient control of the SCR, making it suitable for various applications.

Non Repetitive Peak On-state Current: 60 A

High peak on-state current capability makes this SCR ideal for handling high power loads in industrial settings.

Maximum On-state Current: 4.7 A

The maximum on-state current rating of 4.7 A ensures reliable performance under normal operating conditions.

Maximum Leakage Current: 8 mA

Low leakage current helps in minimizing power losses and improving overall efficiency of the device.

Maximum Operating Temperature: 155 °C

Wide operating temperature range allows the SCR to operate effectively in various environmental conditions.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device provides precise control over the flow of current, making it suitable for specific applications.

Repetitive Peak Off-state Voltage: 150 V

The high off-state voltage rating makes this SCR suitable for applications requiring reliable isolation from the power source.

Maximum Holding Current: 50 mA

The holding current rating ensures the SCR remains in the on-state even after the gate signal is removed, providing stable operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1773A attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

8 mA

Non Repetitive Peak On-state Current:

60 A

Maximum On-state Current:

4.7 A

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

150 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1773A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-082-4127, 5961000824127

NIIN

000824127

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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