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2N1775

Texas Instruments

2N1775 by Texas Instruments

2N1775 by Texas Instruments is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 15mA, Non Repetitive Peak On-state Current of 60A, and Max On-state Current of 4.7A. It operates b/w -65 to 125°C and has a Repetitive Peak Off-state Voltage of 250V. Ideal for power control applications requiring precise current regulation.

Median Price

$24.393

Lifecycle Status

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11

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1k+

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DigiKey

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Bristol Electronics

USA . 665 parts In-Stock

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$12.604

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American Microsemiconductor Inc.

USA . 4 parts In-Stock

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Vyrian

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Anansix

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Digiode

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DigiKey Marketplace

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Electronic Expediters

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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PC Components Company LLC

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IDEA Electronic Components Group

UK . 3,493 parts In-Stock

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$3.341

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ChromeModa Solutions

Germany . 2,351 parts In-Stock

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DigiPath Technology Company

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MKK Technologies

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Microchip USA

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Corphita

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Glotronic Ltd.

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Parana Technologies

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Northwest PG Solutions

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Overview

Looking for a reliable solution for your power control needs? Look no further than the 2N1775 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-notch quality and performance. The 2N1775 is a Silicon Controlled Rectifier (SCR) that offers maximum DC Gate Trigger Current of 15 mA and non-repetitive Peak On-state Current of 60 A. With a wide range of applications, this SCR provides exceptional value and benefits to customers looking for a dependable and efficient power control solution. Trust Texas Instruments to deliver excellence with the 2N1775.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 15 mA

A low gate trigger current ensures efficient operation and reduced power consumption.

Non Repetitive Peak On-state Current: 60 A

The high non repetitive peak on-state current allows for reliable performance in high-current applications.

Maximum On-state Current: 4.7 A

With a maximum on-state current of 4.7 A, this SCR can handle moderate to high current loads effectively.

Maximum Leakage Current: 5 mA

The low leakage current helps in maintaining the efficiency and reliability of the SCR.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature makes this SCR suitable for a wide range of industrial applications.

Trigger Device Type: SCR

Being an SCR, this product provides precise control over the switching of current, making it ideal for various power control applications.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature allows this SCR to be used in extreme cold environments without compromising its performance.

Maximum DC Gate Trigger Voltage: 1.5 V

With a low gate trigger voltage, this SCR can be easily controlled using low-power gate signals.

Repetitive Peak Off-state Voltage: 250 V

The high repetitive peak off-state voltage ensures reliable operation and protection against voltage spikes.

Maximum Holding Current: 50 mA

The high holding current ensures that the SCR remains in the on-state even in the presence of small current fluctuations.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1775 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

5 mA

Non Repetitive Peak On-state Current:

60 A

Maximum On-state Current:

4.7 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

250 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1775 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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