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2N1774

Texas Instruments

2N1774 by Texas Instruments

The Texas Instruments 2N1774 is a Silicon Controlled Rectifier with max DC gate trigger current of 15mA, non-repetitive peak on-state current of 60A, and max on-state current of 4.7A. It operates b/w -65 to 125°C and has a max DC gate trigger voltage of 1.5V. Ideal for applications requiring precise control over electrical currents in various electronic circuits.

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8

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Digiode

USA . 5,323 parts In-Stock

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Vyrian

USA . 3,897 parts In-Stock

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Anansix

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Bristol Electronics

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Electronic Expediters

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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ICP Electronique

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Native Components

USA . 298 parts In-Stock

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$0.049

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Northwest PG Solutions

USA . 1,857 parts In-Stock

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ChromeModa Solutions

Germany . 699 parts In-Stock

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IDEA Electronic Components Group

UK . 135 parts In-Stock

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DigiPath Technology Company

USA . 2,352 parts In-Stock

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MKK Technologies

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AZTECH Wire

Italy . 543 parts In-Stock

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Microchip USA

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One Stop Electronics

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Corphita

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Parana Technologies

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Glotronic Ltd.

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Overview

Experience unparalleled quality with the 2N1774 by Texas Instruments, a leading manufacturer in the industry. As a Silicon Controlled Rectifier (SCR), this product offers high performance and reliability for a wide range of applications. From power supplies to motor control, the 2N1774 provides exceptional value, efficiency, and versatility. Trust Texas Instruments to deliver top-notch products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 15 mA

The low gate trigger current requirement allows for efficient triggering of the SCR, making it suitable for applications where low power consumption is necessary.

Non Repetitive Peak On-state Current: 60 A

The high peak on-state current capability ensures that the SCR can handle sudden high current surges without damage, making it reliable for heavy-duty applications.

Maximum On-state Current: 4.7 A

The moderate on-state current rating provides a good balance between handling normal operating currents and allowing for overcurrent protection in case of faults.

Maximum Leakage Current: 6 mA

The low leakage current ensures minimal power loss when the SCR is in the off-state, contributing to overall energy efficiency of the system.

Maximum Operating Temperature: 125 °C

The high operating temperature range allows the SCR to operate in demanding environments without performance degradation, enhancing its reliability.

Trigger Device Type: SCR

Being an SCR, this product offers high reliability and robust performance in controlling power in various applications such as motor control, lighting, and heating systems.

Minimum Operating Temperature: -65 °C

The wide operating temperature range enables the SCR to function in extremely low temperature conditions, making it suitable for industrial and automotive applications.

Maximum DC Gate Trigger Voltage: 1.5 V

The low gate trigger voltage requirement simplifies the driving circuit design and reduces overall system cost, making it an economical choice for applications.

Repetitive Peak Off-state Voltage: 200 V

The high off-state voltage capability allows the SCR to block high voltages effectively, ensuring reliable isolation in various power control applications.

Maximum Holding Current: 50 mA

The sufficient holding current rating ensures that the SCR remains in the on-state once triggered, providing stable operation in continuous conduction applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1774 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

6 mA

Non Repetitive Peak On-state Current:

60 A

Maximum On-state Current:

4.7 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1774 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-883-5307, 5961008835307, 5961-14-316-0072, 5961143160072

NIIN

008835307, 143160072

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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