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2N1772A

Texas Instruments

2N1772A by Texas Instruments

2N1772A by Texas Instruments is a Silicon Controlled Rectifier with 15mA DC Gate Trigger Current, 60A Non Repetitive Peak On-state Current, and 4.7A Max On-state Current. It operates b/w -65°C to 155°C and has a max DC Gate Trigger Voltage of 1.5V. Ideal for applications requiring precise current control in various temperature conditions.

Median Price

$24.393

Lifecycle Status

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In-Stock Inventory

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Freelance Electronics

USA . 10 parts In-Stock

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$4.037

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Bristol Electronics

USA . 620 parts In-Stock

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$13.656

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$12.604

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$11.198

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American Microsemiconductor Inc.

USA . 164 parts In-Stock

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TEDSS.com

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Vyrian

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Digiode

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ComSIT Distribution GmbH

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Sogenti Electronics

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Resion

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Electronic Expediters

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ICP Electronique

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Holdelec - ElecDif-Pro

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ECAB

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Parana Technologies

USA . 675 parts In-Stock

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$3.427

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$3.952

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DigiPath Technology Company

USA . 1,545 parts In-Stock

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$3.774

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ChromeModa Solutions

Germany . 6,568 parts In-Stock

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$3.851

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$3.158

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IDEA Electronic Components Group

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One Stop Electronics

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AZTECH Wire

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Corphita

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Native Components

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Northwest PG Solutions

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Overview

Unlock the power of advanced technology with the 2N1772A by Texas Instruments, a high-quality silicon controlled rectifier designed to deliver superior performance and reliability. Manufactured by industry leader Texas Instruments, this SCR offers unmatched efficiency and precision in a wide range of applications. From industrial controls to power supplies, the 2N1772A provides customers with exceptional value, benefits, and advantages, making it the perfect choice for all your electronic needs. Trust Texas Instruments to provide you with the best in semiconductor technology.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 15 mA

Low gate trigger current allows for precise control over switching, reducing power consumption and improving overall efficiency.

Non Repetitive Peak On-state Current: 60 A

Ability to handle high peak currents makes this SCR suitable for applications with intermittent high power requirements.

Maximum On-state Current: 4.7 A

With a high on-state current rating, this SCR can reliably handle continuous load currents without overheating or failure.

Maximum Leakage Current: 9 mA

Low leakage current ensures minimal power loss when the SCR is in the off-state, contributing to energy efficiency.

Maximum Operating Temperature: 155 °C

Wide operating temperature range allows for use in diverse environments and under varying conditions.

Minimum Operating Temperature: -65 °C

Ability to operate at extremely low temperatures makes this SCR suitable for applications in harsh or cold environments.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage requirement ensures compatibility with a wide range of control circuits, simplifying design and integration.

Repetitive Peak Off-state Voltage: 100 V

High off-state voltage tolerance allows for reliable performance in high voltage applications without risk of damage.

Maximum Holding Current: 50 mA

High holding current ensures the SCR remains in the on-state even under fluctuating load conditions, providing stable operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1772A attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

9 mA

Non Repetitive Peak On-state Current:

60 A

Maximum On-state Current:

4.7 A

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1772A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-226-8687, 5961002268687, 5961-14-255-6711, 5961142556711, 5961-00-521-8798, 5961005218798

NIIN

002268687, 142556711, 005218798

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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