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2N1770A

Texas Instruments

2N1770A by Texas Instruments

2N1770A by Texas Instruments is a Silicon Controlled Rectifier with 15mA DC Gate Trigger Current, 60A Non Repetitive Peak On-state Current, and 4.7A Max On-state Current. It operates b/w -65 to 155°C and has a max DC Gate Trigger Voltage of 1.5V. Ideal for applications requiring precise current control in various temperature conditions.

Median Price

$24.393

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Bristol Electronics

USA . 865 parts In-Stock

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$13.656

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$12.604

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$11.198

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865

$13.656

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American Microsemiconductor Inc.

USA . 1,026 parts In-Stock

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$35.130

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Vyrian

USA . 7,331 parts In-Stock

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Digiode

USA . 960 parts In-Stock

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PUI

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Electronic Expediters

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99

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Parana Technologies

USA . 192 parts In-Stock

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$2.621

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$243.404

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$2.359

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192

$2.621

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$2.359

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DigiPath Technology Company

USA . 469 parts In-Stock

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$2.886

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$2.655

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469

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ChromeModa Solutions

Germany . 2,193 parts In-Stock

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$2.945

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$2.415

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IDEA Electronic Components Group

UK . 197 parts In-Stock

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$2.945

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$2.650

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One Stop Electronics

USA . 685 parts In-Stock

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$6.100

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AZTECH Wire

Italy . 657 parts In-Stock

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Corphita

USA . 3,944 parts In-Stock

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Northwest PG Solutions

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Native Components

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Overview

Enhance your electronic projects with the high-quality 2N1770A Silicon Controlled Rectifier by Texas Instruments. With a maximum on-state current of 4.7A and non-repetitive peak on-state current of 60A, this SCR offers superior performance and reliability. Ideal for applications requiring precise control of power flow, such as motor controls and lighting systems, the 2N1770A ensures efficiency and durability. Trust in Texas Instruments' reputation for excellence and innovation, and experience the value and benefits that this product brings to your designs.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 15 mA

Low gate trigger current allows for precise control of the SCR, making it suitable for applications requiring low current switching.

Non Repetitive Peak On-state Current: 60 A

High non-repetitive peak on-state current capability ensures the SCR can handle short-term high current loads without damage.

Maximum On-state Current: 4.7 A

High on-state current capacity enables the SCR to handle moderate current loads efficiently.

Maximum Leakage Current: 9 mA

Low leakage current ensures minimal power loss when the SCR is in the off-state, leading to higher efficiency in applications.

Maximum Operating Temperature: 155 °C

Wide operating temperature range allows the SCR to function reliably in various environmental conditions.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device offers precise control over switching operations and is suitable for many industrial applications.

Minimum Operating Temperature: -65 °C

Extended minimum operating temperature range enables the SCR to function in cold environments without performance degradation.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage results in efficient triggering of the SCR with minimal power loss, making it suitable for low-voltage applications.

Repetitive Peak Off-state Voltage: 25 V

Relatively high off-state voltage capability allows the SCR to withstand voltage spikes or surges in the circuit without breakdown.

Maximum Holding Current: 50 mA

High holding current ensures the SCR remains in the on-state even in the absence of gate current, enhancing the reliability of the device.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1770A attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

9 mA

Non Repetitive Peak On-state Current:

60 A

Maximum On-state Current:

4.7 A

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

25 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1770A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-089-6678, 5961000896678, 5961-00-898-7253, 5961008987253, 5961-14-360-8442, 5961143608442

NIIN

000896678, 008987253, 143608442

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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