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BT151-500C

NXP Semiconductors

BT151-500C by NXP Semiconductors

The NXP Semiconductors BT151-500C is a single SCR with a max on-state current of 7.5A and non-repetitive peak on-state current of 110A. It has a repetitive peak reverse voltage of 500V, making it suitable for applications requiring high power control in electronic circuits.

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1k+

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VNN

France . 7,615 parts In-Stock

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ComSIT Distribution GmbH

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ComSIT USA

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Digiode

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Anansix

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Nova Conductors

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LWI Electronics Inc

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Vyrian

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LittleDiode

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Corohmni

South Africa . 628 parts In-Stock

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Ampacity Inc.

Singapore . 322 parts In-Stock

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One Stop Electronics

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Argo Parts USA

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Continental Prestige Electronics

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Overview

Experience unbeatable quality and reliability with the NXP Semiconductors BT151-500C Silicon Controlled Rectifier. Designed for efficiency and precision, this product offers seamless performance in a variety of applications. With a maximum on-state current of 7.5 A and a non-repetitive peak on-state current of 110 A, this SCR is built to handle your toughest challenges. Trust in NXP Semiconductors' reputation for excellence and unlock the potential of your projects with the BT151-500C.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring long-lasting performance.

Maximum DC Gate Trigger Current: 15 mA

Allows for reliable and precise control of the SCR, enhancing overall system efficiency.

Configuration: SINGLE

Simplified design with a single SCR configuration makes installation and maintenance easier.

Non Repetitive Peak On-state Current: 110 A

Capable of handling high peak currents, making it suitable for demanding applications.

Maximum On-state Current: 7.5 A

Can handle moderate current loads effectively, suitable for various electrical systems.

Maximum Leakage Current: 0.5 mA

Low leakage current helps in reducing power wastage and improving energy efficiency.

Repetitive Peak Reverse Voltage: 500 V

A high reverse voltage rating provides robust protection against voltage spikes and surges.

Maximum Operating Temperature: 125 °C

Operates efficiently at high temperatures, ideal for industrial and automotive applications.

Trigger Device Type: SCR

Utilizes Silicon Controlled Rectifier technology for precise switching and control in electrical circuits.

Maximum RMS On-state Current: 12 A

Capable of handling continuous AC currents efficiently, suitable for various load conditions.

Repetitive Peak Off-state Voltage: 500 V

Ensures safe operation at high off-state voltages, enhancing system reliability.

Maximum Holding Current: 20 mA

Maintains conduction state after the gate trigger is removed, ensuring stability in the circuit.

Nominal Circuit Commutated Turn-off Time: 70 us

Provides fast turn-off capability, reducing power loss and improving system performance.

Technical Specifications

Silicon Controlled Rectifiers (SCR) BT151-500C attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from NXP Semiconductors

Specs

Case Connection:

Nominal Circuit Commutated Turn-off Time:

70 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

20 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

.5 mA

Non Repetitive Peak On-state Current:

110 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

7.5 A

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

500 V

Repetitive Peak Reverse Voltage:

500 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

BT151-500C Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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