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BT151-500RT

NXP Semiconductors

BT151-500RT by NXP Semiconductors

The NXP Semiconductors BT151-500RT is a single SCR with a max on-state current of 8A and repetitive peak reverse voltage of 500V. It is designed for applications requiring high power control in industrial settings, offering a max operating temperature of 150°C. With a package style of flange mount and through-hole terminal form, it ensures reliable performance in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Digiode

USA . 2,563 parts In-Stock

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Anansix

USA . 2,195 parts In-Stock

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Nova Conductors

Japan . 900 parts In-Stock

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900

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VNN

France . 800 parts In-Stock

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800

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Vyrian

USA . 722 parts In-Stock

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ComSIT Distribution GmbH

Germany . 700 parts In-Stock

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700

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ComSIT USA

USA . 700 parts In-Stock

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700

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One Stop Electronics

USA . 1,411 parts In-Stock

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$0.100

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Aztec Data Supply Inc.

USA . 4,749 parts In-Stock

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Corohmni

South Africa . 454 parts In-Stock

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AZTECH Wire

Italy . 722 parts In-Stock

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Ampacity Inc.

Singapore . 283 parts In-Stock

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Authorized Procurement Solutions

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Kepictronics

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UNI Independent Distributors

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Argo Parts USA

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Continental Prestige Electronics

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Corphita

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Bastille Electronics

Australia . 450 parts In-Stock

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Overview

Discover the power and reliability of the BT151-500RT by NXP Semiconductors, a top-quality Silicon Controlled Rectifier designed for a wide range of applications. With a maximum on-state current of 8A and a repetitive peak reverse voltage of 500V, this SCR offers unparalleled performance. Whether you're looking to control power in industrial equipment or regulate voltage in consumer electronics, this product delivers exceptional value and efficiency. Trust NXP Semiconductors to provide innovative solutions that meet your needs with the BT151-500RT.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material makes the product lightweight and durable, ideal for various applications.

Maximum DC Gate Trigger Current: 15 mA

The maximum DC gate trigger current of 15 mA allows for efficient and reliable triggering of the SCR in different operating conditions.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making it easier to integrate into different systems.

Non Repetitive Peak On-state Current: 132 A

The high non-repetitive peak on-state current of 132 A enables the SCR to handle large surge currents without damage, ensuring robust performance.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact form factor, allowing for efficient use of space in circuit designs.

Terminal Form: THROUGH-HOLE

The through-hole terminal form simplifies the soldering process and ensures secure connections, enhancing the reliability of the product.

Maximum On-state Current: 8 A

The maximum on-state current of 8 A enables the SCR to handle moderate current loads effectively, making it suitable for a wide range of applications.

Maximum Leakage Current: 0.5 mA

The low maximum leakage current of 0.5 mA ensures minimal power loss and improves the overall efficiency of the SCR.

Repetitive Peak Reverse Voltage: 500 V

The high repetitive peak reverse voltage of 500 V provides protection against reverse polarity conditions, increasing the reliability of the SCR.

No. of Terminals: 3

The three terminals provide flexibility in circuit connections and enable the SCR to be easily integrated into different systems.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy mounting and secure attachment, making installation convenient and reliable.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures the SCR can withstand elevated temperatures without degradation, improving its durability.

Trigger Device Type: SCR

Being an SCR, the trigger device type provides precise control over the switching characteristics, making it suitable for various power control applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C allows the SCR to operate in cold environments without issues, increasing its versatility.

Terminal Position: SINGLE

The single terminal position simplifies the connection process and ensures proper alignment, enhancing the overall reliability of the product.

Maximum RMS On-state Current: 12.5 A

The maximum RMS on-state current of 12.5 A indicates the SCR's ability to handle continuous current loads efficiently, enabling reliable operation over extended periods.

Maximum DC Gate Trigger Voltage: 1.5 V

The low maximum DC gate trigger voltage of 1.5 V ensures efficient triggering and control of the SCR, enhancing its performance in various applications.

Case Connection: ANODE

The case connection to the anode simplifies the circuit design and ensures proper polarity, making the product easier to integrate into different systems.

Repetitive Peak Off-state Voltage: 500 V

The high repetitive peak off-state voltage of 500 V provides protection against voltage spikes, ensuring the SCR's reliability in various operating conditions.

Minimum Critical Rate of Rise of Off-state Voltage: 50 V/us

The minimum critical rate of rise of off-state voltage of 50 V/us indicates the SCR's ability to respond quickly to voltage changes, enhancing its reliability in dynamic environments.

Maximum Holding Current: 20 mA

The maximum holding current of 20 mA ensures the SCR remains in the on-state after triggering, preventing unwanted turn-off and enhancing circuit stability.

Nominal Circuit Commutated Turn-off Time: 70 us

The nominal circuit commutated turn-off time of 70 microseconds indicates the SCR's rapid turn-off capability, enabling efficient control of power flow in circuits.

Technical Specifications

Silicon Controlled Rectifiers (SCR) BT151-500RT attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from NXP Semiconductors

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

Nominal Circuit Commutated Turn-off Time:

70 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

20 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

Maximum Leakage Current:

.5 mA

Non Repetitive Peak On-state Current:

132 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

8 A

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

12.5 A

Repetitive Peak Off-state Voltage:

500 V

Repetitive Peak Reverse Voltage:

500 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

BT151-500RT Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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