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2N2454

Texas Instruments

2N2454 by Texas Instruments

2N2454 by Texas Instruments is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 20mA, Non Repetitive Peak On-state Current of 75A, and Max On-state Current of 3A. It operates b/w -55°C to 105°C and has a Repetitive Peak Off-state Voltage of 400V. Ideal for power control applications requiring precise current regulation.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 8,275 parts In-Stock

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Digiode

USA . 2,360 parts In-Stock

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Electronic Expediters

USA . 5 parts In-Stock

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Parana Technologies

USA . 317 parts In-Stock

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$2.193

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$2.703

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DigiPath Technology Company

USA . 1,314 parts In-Stock

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$2.415

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$2.222

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ChromeModa Solutions

Germany . 3,919 parts In-Stock

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$2.464

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$2.020

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IDEA Electronic Components Group

UK . 1,788 parts In-Stock

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$2.464

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$2.218

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Northwest PG Solutions

USA . 800 parts In-Stock

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$2.518

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$2.518

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AZTECH Wire

Italy . 551 parts In-Stock

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$19.254

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One Stop Electronics

USA . 1,596 parts In-Stock

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$27.100

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Native Components

USA . 553 parts In-Stock

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$2.221

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Corphita

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Overview

Discover the power of the Texas Instruments 2N2454 Silicon Controlled Rectifier! With a reputation for excellence in manufacturing, Texas Instruments delivers a top-quality product that is reliable and efficient. Ideal for a wide range of applications, this SCR offers customers unparalleled value and benefits. Whether you need a dependable solution for industrial equipment or electronic devices, the 2N2454 is the perfect choice. Trust Texas Instruments to provide you with the quality and performance you need.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 20 mA

The low gate trigger current ensures efficient and accurate control of the SCR, making it reliable for various applications.

Non Repetitive Peak On-state Current: 75 A

With a high non repetitive peak on-state current, this SCR can handle heavy loads and surges without any issues, making it suitable for demanding environments.

Maximum On-state Current: 3 A

The maximum on-state current of 3 A allows for stable operation within the specified limits, ensuring safety and performance of the device.

Maximum Leakage Current: 0.5 mA

The low leakage current of 0.5 mA helps in reducing power losses and improving overall efficiency of the SCR.

Maximum Operating Temperature: 105 °C

The high maximum operating temperature allows the SCR to operate reliably in harsh temperature conditions, making it versatile for a wide range of applications.

Trigger Device Type: SCR

Being an SCR, this device provides precise and reliable control over the conduction of current, making it a popular choice in various industrial applications.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature enables the SCR to function effectively in cold environments, widening its scope of applications.

Maximum DC Gate Trigger Voltage: 3 V

The low gate trigger voltage requirement of 3 V ensures energy efficiency and precise control over the SCR, making it suitable for low-power applications.

Repetitive Peak Off-state Voltage: 400 V

With a high repetitive peak off-state voltage rating, this SCR can withstand high voltage spikes and fluctuations, ensuring reliability in challenging operating conditions.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N2454 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

20 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Leakage Current:

.5 mA

Non Repetitive Peak On-state Current:

75 A

Maximum On-state Current:

3 A

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-55 Cel

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N2454 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-959-4565, 5961009594565

NIIN

009594565

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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