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TIC116C

Texas Instruments

TIC116C by Texas Instruments

TIC116C by Texas Instruments is a single SCR with max. DC gate trigger current of 20mA, non-repetitive peak on-state current of 80A, and max. on-state current of 8A. It is used in applications requiring high power control such as industrial motor drives and lighting systems due to its robust design and wide operating temperature range from -40°C to 110°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,978 parts In-Stock

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7,978

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Digiode

USA . 3,170 parts In-Stock

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3,170

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Halfin

Belgium . 648 parts In-Stock

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648

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Distributors (Availability)

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Parana Technologies

USA . 2,365 parts In-Stock

1+ parts

$4.053

100+ parts

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$4.515

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2,365

$4.053

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$4.515

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ChromeModa Solutions

Germany . 5,400 parts In-Stock

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$4.554

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$3.734

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5,400

$4.554

$3.734

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IDEA Electronic Components Group

UK . 52 parts In-Stock

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$4.554

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$4.099

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52

$4.554

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$4.099

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AZTECH Wire

Italy . 307 parts In-Stock

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$6.525

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307

$6.525

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One Stop Electronics

USA . 1,583 parts In-Stock

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$9.100

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1,583

$9.100

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Corphita

USA . 2,439 parts In-Stock

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2,439

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DigiPath Technology Company

USA . 2,080 parts In-Stock

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$4.106

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2,080

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$4.106

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Overview

Discover the superior quality and reliability of the TIC116C by Texas Instruments, a leading manufacturer in the industry. As a Silicon Controlled Rectifier (SCR), this product offers unparalleled performance and durability for a variety of applications. With its advanced technology and high standards, the TIC116C ensures optimal functionality and efficiency, making it the perfect choice for your electronic projects. Experience the value and benefits of this top-of-the-line component and take your designs to the next level with the TIC116C.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the SCR reliable for long-term use.

Maximum DC Gate Trigger Current: 20 mA

Allows for efficient triggering of the SCR, ensuring smooth and reliable operation.

Configuration: SINGLE

Simplified design with a single configuration makes installation and maintenance easier.

Non Repetitive Peak On-state Current: 80 A

Capable of handling high peak currents, making it suitable for demanding applications.

Terminal Form: THROUGH-HOLE

Easy to mount and solder onto circuit boards, facilitating integration into electronic systems.

Maximum On-state Current: 8 A

Suitable for moderate current applications, balancing performance and efficiency.

Repetitive Peak Reverse Voltage: 300 V

Provides a high reverse voltage rating for reliable operation in diverse circuit configurations.

Maximum Operating Temperature: 110 °C

Can operate at high temperatures without performance degradation, suitable for industrial environments.

Trigger Device Type: SCR

Specifically designed as a Silicon Controlled Rectifier for precise control of current flow.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TIC116C attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

20 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

40 mA

JESD-30 Code:

R-PSFM-T3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

80 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

8 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

300 V

Repetitive Peak Reverse Voltage:

300 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TIC116C Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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