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TIC126C

Texas Instruments

TIC126C by Texas Instruments

TIC126C by Texas Instruments is a single SCR with max DC gate trigger current of 20mA, on-state current of 12A, and off-state voltage of 300V. It is used in applications requiring reliable switching at temperatures ranging from -40 to 110°C.

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Lifecycle Status

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4

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1k+

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Vyrian

USA . 4,341 parts In-Stock

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Halfin

Belgium . 2,627 parts In-Stock

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Digiode

USA . 1,381 parts In-Stock

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LittleDiode

UK . 3 parts In-Stock

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Parana Technologies

USA . 1,023 parts In-Stock

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$2.999

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$278.530

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$2.699

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$2.999

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$2.699

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DigiPath Technology Company

USA . 1,775 parts In-Stock

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$3.303

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IDEA Electronic Components Group

UK . 1,163 parts In-Stock

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$3.370

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$3.033

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ChromeModa Solutions

Germany . 902 parts In-Stock

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$3.370

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$2.763

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One Stop Electronics

USA . 466 parts In-Stock

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$5.100

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AZTECH Wire

Italy . 547 parts In-Stock

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$13.905

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Corphita

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Assy Fe

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Overview

Unlock the power of reliable performance with the TIC126C by Texas Instruments. As a trusted manufacturer, Texas Instruments delivers top-quality Silicon Controlled Rectifiers (SCR) like the TIC126C. This versatile component offers a range of applications, from industrial equipment to consumer electronics. With a maximum on-state current of 12A and a non-repetitive peak on-state current of 100A, this SCR ensures efficient operation and enhanced durability. Trust Texas Instruments for unmatched value and superior performance in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the SCR, ensuring a longer lifespan.

Maximum DC Gate Trigger Current: 20 mA

This high gate trigger current allows for reliable and efficient control of the SCR, ensuring stable operation.

Configuration: SINGLE

The single configuration simplifies installation and usage of the SCR, making it user-friendly.

Non Repetitive Peak On-state Current: 100 A

With a high peak on-state current, this SCR is capable of handling high power loads without any issues.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and integration into various circuits and systems.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide secure connections and stability, ensuring reliable operation.

Maximum On-state Current: 12 A

The high on-state current rating allows the SCR to handle moderate power loads efficiently.

Maximum Leakage Current: 2 mA

The low leakage current helps in preventing unnecessary power losses and ensures energy efficiency.

Repetitive Peak Reverse Voltage: 300 V

The high reverse voltage rating makes the SCR suitable for a wide range of applications that require high voltage handling.

No. of Terminals: 3

The three terminals provide flexibility in connectivity options and allow for versatile use in different circuit configurations.

Package Style (Meter): FLANGE MOUNT

The flange mount style makes it easy to install the SCR securely in place, preventing any movement during operation.

Maximum Operating Temperature: 110 °C

The high operating temperature range ensures reliability and stability even in harsh environmental conditions.

Trigger Device Type: SCR

Being an SCR, this device offers precise and controlled switching capabilities, making it suitable for various applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the SCR to function effectively in cold environments without any issues.

Terminal Position: SINGLE

The single terminal position simplifies the connection process and makes it easier to integrate the SCR into existing systems.

Maximum RMS On-state Current: 12 A

The high RMS on-state current rating ensures the SCR can handle continuous loads effectively without overheating.

Maximum DC Gate Trigger Voltage: 1.5 V

The low gate trigger voltage allows for efficient and reliable control of the SCR, enhancing its performance.

Case Connection: ANODE

The anode case connection provides a secure and stable connection point for external circuits, ensuring reliable operation.

Repetitive Peak Off-state Voltage: 300 V

The high off-state voltage rating makes this SCR suitable for applications that require handling high voltage loads.

Minimum Critical Rate of Rise of Off-state Voltage: 100 V/us

The minimum critical rate of rise ensures the SCR can respond quickly and reliably to changes in off-state voltage, enhancing its performance.

Maximum Holding Current: 40 mA

The high holding current ensures the SCR remains in the on-state even under varying conditions, providing stable operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TIC126C attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

20 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

40 mA

JESD-30 Code:

R-PSFM-T3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

100 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

12 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

300 V

Repetitive Peak Reverse Voltage:

300 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TIC126C Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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