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TIC116S

Texas Instruments

TIC116S by Texas Instruments

TIC116S by Texas Instruments is a Silicon Controlled Rectifier with 20mA DC Gate Trigger Current, 80A Non Repetitive Peak On-state Current, and 5A Max On-state Current. It is used in applications requiring precise current control such as motor drives, lighting controls, and power supplies.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,215 parts In-Stock

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Digiode

USA . 2,856 parts In-Stock

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Semicontronic

India . 1,634 parts In-Stock

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$0.100

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$0.098

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$0.097

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1,634

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One Stop Electronics

USA . 522 parts In-Stock

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$1.100

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Parana Technologies

USA . 2,068 parts In-Stock

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$3.018

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$3.528

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IDEA Electronic Components Group

UK . 2,234 parts In-Stock

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$3.391

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$3.052

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ChromeModa Solutions

Germany . 969 parts In-Stock

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$3.391

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$2.781

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AZTECH Wire

Italy . 773 parts In-Stock

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$17.529

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Ampacity Inc.

Singapore . 459 parts In-Stock

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$19.100

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Kepictronics

USA . 15,000 parts In-Stock

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Corphita

USA . 4,449 parts In-Stock

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DigiPath Technology Company

USA . 1,389 parts In-Stock

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$3.057

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Corohmni

South Africa . 288 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality TIC116S Silicon Controlled Rectifier by Texas Instruments. Designed for efficiency and reliability, this SCR offers a maximum DC Gate Trigger Current of 20 mA and a Non Repetitive Peak On-state Current of 80 A. With a wide range of applications in power control circuits, motor drives, and lighting systems, the TIC116S provides exceptional value and performance. Trust Texas Instruments to deliver cutting-edge technology that meets your needs with precision and innovation.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 20 mA

Low gate trigger current ensures efficient control of the SCR, making it reliable and easy to operate.

Non Repetitive Peak On-state Current: 80 A

High peak on-state current capability allows the SCR to handle sudden surge currents without damage, making it suitable for demanding applications.

Maximum On-state Current: 5 A

The maximum on-state current of 5A provides a good balance between power handling capability and efficiency for various load requirements.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power loss and helps in maintaining the efficiency of the SCR during off-state conditions.

Maximum Operating Temperature: 125°C

High operating temperature tolerance makes the SCR suitable for industrial applications where temperature fluctuations are common.

Trigger Device Type: SCR

Being an SCR device, it offers high reliability, fast switching speeds, and low conduction losses, making it a preferred choice for various power control applications.

Minimum Operating Temperature: -40°C

Wide operating temperature range allows the SCR to function effectively in extreme cold conditions, enhancing its versatility.

Maximum DC Gate Trigger Voltage: 2.5 V

Low gate trigger voltage ensures efficient control and activation of the SCR, resulting in improved device performance.

Repetitive Peak Off-state Voltage: 700 V

High off-state voltage rating enables the SCR to withstand voltage surges and spikes, making it suitable for high-power applications.

Minimum Critical Rate of Rise of Off-state Voltage: 100 V/us

Fast off-state voltage switching capability ensures quick response times and effective protection against voltage transients, making the SCR reliable in fluctuating voltage conditions.

Maximum Holding Current: 70 mA

High holding current ensures stable operation and prevents random turn-on of the SCR, enhancing its safety and reliability in continuous operation.

Nominal Circuit Commutated Turn-off Time: 11 us

Fast turn-off time ensures quick switching and efficient control of the SCR, making it suitable for applications requiring high-speed switching and precise timing.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TIC116S attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Nominal Circuit Commutated Turn-off Time:

11 us

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

20 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

70 mA

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

80 A

Maximum On-state Current:

5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

700 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

TIC116S Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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