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TIC106E

Texas Instruments

TIC106E by Texas Instruments

TIC106E by Texas Instruments is a Silicon Controlled Rectifier with max. DC Gate Trigger Current of 0.2mA, On-state Current of 3.2A, and Off-state Voltage of 500V. It operates b/w -45 to 125°C and is ideal for power control applications requiring precise current regulation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,662 parts In-Stock

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Digiode

USA . 1,305 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 631 parts In-Stock

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$0.100

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631

$0.100

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One Stop Electronics

USA . 1,291 parts In-Stock

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$2.100

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Parana Technologies

USA . 1,795 parts In-Stock

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$4.357

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$4.776

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1,795

$4.357

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$4.776

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DigiPath Technology Company

USA . 1,914 parts In-Stock

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$4.798

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$4.798

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ChromeModa Solutions

Germany . 6,393 parts In-Stock

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$4.896

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$4.015

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$4.896

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IDEA Electronic Components Group

UK . 597 parts In-Stock

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$4.896

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$4.406

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597

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AZTECH Wire

Italy . 193 parts In-Stock

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$9.240

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Semicontronic

India . 442 parts In-Stock

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$25.100

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$24.472

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$24.347

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Perfect Parts

USA . 1,680 parts In-Stock

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1,680

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Corphita

USA . 1,318 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 750 parts In-Stock

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Corohmni

South Africa . 74 parts In-Stock

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Overview

Discover the powerful TIC106E by Texas Instruments, a high-quality Silicon Controlled Rectifier designed for a wide range of applications. With a maximum on-state current of 3.2 A and a non-repetitive peak on-state current of 30 A, this SCR offers exceptional performance and reliability. Whether you need to control power in industrial equipment or lighting systems, the TIC106E delivers superior efficiency and precision. Trust Texas Instruments for cutting-edge technology and unmatched value. Elevate your projects with the TIC106E today!

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.2 mA

This low trigger current requirement makes the product suitable for applications where power consumption needs to be minimized.

Non Repetitive Peak On-state Current: 30 A

High peak on-state current allows the product to handle sudden surges in current without damage, making it reliable in high power applications.

Maximum On-state Current: 3.2 A

The maximum on-state current of 3.2 A enables the product to handle moderate power loads efficiently.

Maximum Leakage Current: 0.4 mA

Low leakage current ensures energy efficiency and prevents unnecessary power loss in standby mode.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C allows the product to withstand elevated temperatures, increasing its durability and reliability.

Trigger Device Type: SCR

SCR technology offers high efficiency and reliability, making it a preferred choice for various industrial and power electronics applications.

Repetitive Peak Off-state Voltage: 500 V

High off-state voltage rating ensures the product can withstand voltage spikes and surges, making it suitable for high voltage circuits.

Minimum Critical Rate of Rise of Off-state Voltage: 10 V/us

The fast rate of rise of off-state voltage ensures quick response and protection against voltage transients, enhancing the product's performance in reactive power control applications.

Maximum Holding Current: 8 mA

The low holding current requirement reduces power consumption during normal operation, contributing to energy efficiency.

Nominal Circuit Commutated Turn-off Time: 7.7 us

Fast turn-off time enhances the product's switching speed, making it suitable for applications requiring quick response times.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TIC106E attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Nominal Circuit Commutated Turn-off Time:

7.7 us

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1.2 V

Maximum Holding Current:

8 mA

Maximum Leakage Current:

.4 mA

Non Repetitive Peak On-state Current:

30 A

Maximum On-state Current:

3.2 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Repetitive Peak Off-state Voltage:

500 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TIC106E Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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