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TIC116N

Texas Instruments

TIC116N by Texas Instruments

TIC116N by Texas Instruments is a Silicon Controlled Rectifier with a Max On-state Current of 8A, Non Repetitive Peak On-state Current of 80A, and Max DC Gate Trigger Current of 20mA. It is used in applications requiring precise current control such as motor drives, lighting controls, and power supplies.

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Vyrian

USA . 7,008 parts In-Stock

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Digiode

USA . 3,295 parts In-Stock

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ABC Electronics Ltd.

UK . 1,500 parts In-Stock

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Halfin

Belgium . 668 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 61 parts In-Stock

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Huijzer Components

Netherlands . 57 parts In-Stock

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PC Components Company LLC

USA . 45 parts In-Stock

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Bristol Electronics

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Holdelec - ElecDif-Pro

France . 36 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 35 parts In-Stock

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GES GmbH

Germany . 5 parts In-Stock

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LittleDiode

UK . 1 parts In-Stock

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One Stop Electronics

USA . 191 parts In-Stock

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$1.100

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Parana Technologies

USA . 1,822 parts In-Stock

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DigiPath Technology Company

USA . 1,773 parts In-Stock

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IDEA Electronic Components Group

UK . 2,342 parts In-Stock

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$3.773

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ChromeModa Solutions

Germany . 481 parts In-Stock

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$4.192

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$3.437

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AZTECH Wire

Italy . 814 parts In-Stock

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Kepictronics

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A-Z Elektronik GmbH

Germany . 6,728 parts In-Stock

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Assy Fe

Spain . 2,974 parts In-Stock

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Corphita

USA . 2,703 parts In-Stock

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Overview

Upgrade your electronic projects with the reliable and efficient TIC116N Silicon Controlled Rectifier from Texas Instruments. With a maximum DC gate trigger current of 20mA and non-repetitive peak on-state current of 80A, this SCR offers superior performance for a variety of applications. Whether you're looking to control power in industrial machinery or regulate voltage in consumer electronics, the TIC116N delivers precise and consistent results. Trust Texas Instruments' reputation for quality and innovation, and experience the value and benefits that this product brings to your designs.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 20 mA

Low gate trigger current allows for efficient control of the SCR, resulting in better performance and reliability.

Non Repetitive Peak On-state Current: 80 A

High peak on-state current capability ensures that the SCR can handle heavy loads or transient surges effectively.

Maximum On-state Current: 8 A

With a maximum on-state current of 8 A, this SCR is suitable for a wide range of applications requiring medium to high current handling capabilities.

Maximum Leakage Current: 2 mA

Low leakage current reduces power loss and improves efficiency in the circuit.

Maximum Operating Temperature: 110 °C

With a high maximum operating temperature, this SCR can withstand elevated temperatures, making it suitable for harsh environments.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier ensures that this device provides reliable and precise control over the flow of current in the circuit.

Repetitive Peak Off-state Voltage: 800 V

High off-state voltage rating allows for safe operation in applications where high voltage handling capability is required.

Maximum Holding Current: 40 mA

A high holding current rating ensures that the SCR remains in the on-state even after the gate trigger signal is removed, providing stability in the circuit.

Nominal Circuit Commutated Turn-off Time: 11 us

Fast turn-off time ensures quick response and control, making this SCR suitable for applications requiring rapid switching.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TIC116N attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Nominal Circuit Commutated Turn-off Time:

11 us

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

20 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

40 mA

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

80 A

Maximum On-state Current:

8 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

TIC116N Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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