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T1220N22TOFVT

Infineon Technologies

T1220N22TOFVT by Infineon Technologies

T1220N22TOFVT by Infineon Technologies is a SINGLE SCR with 2200V repetitive peak reverse voltage and 2740A max RMS on-state current. It has a surface mount ROUND package shape, making it suitable for high-power applications like industrial motor drives and power supplies.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 579 parts In-Stock

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579

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Digiode

USA . 504 parts In-Stock

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504

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Nova Conductors

Japan . 15 parts In-Stock

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Corohmni

South Africa . 18 parts In-Stock

1+ parts

$3.293

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18

$3.293

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Modulus Dynamics

Lithuania . 2,723 parts In-Stock

1+ parts

$3.794

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$3.642

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$3.490

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2,723

$3.794

$3.642

$3.490

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Ampacity Inc.

Singapore . 1,551 parts In-Stock

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$22.100

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$22.100

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Continental Prestige Electronics

USA . 2,918 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Argo Parts USA

USA . 535 parts In-Stock

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535

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Corphita

USA . 33 parts In-Stock

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33

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Overview

Unlock the power of advanced technology with the T1220N22TOFVT from Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-quality Silicon Controlled Rectifiers that are ideal for a wide range of applications. With a maximum DC Gate Trigger Current of 250 mA and a Repetitive Peak Reverse Voltage of 2200 V, this SCR offers unmatched reliability and performance. Experience seamless operation and enhanced efficiency with the T1220N22TOFVT, making it the perfect choice for your next project. Elevate your capabilities with this innovative product and revolutionize the way you work.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 250 mA

This high trigger current allows for precise control over the SCR, making it suitable for a wide range of applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes the SCR easy to integrate into various systems.

Surface Mount: YES

Being surface mountable means the SCR can be easily installed on PCBs, saving space and simplifying assembly process.

Package Shape: ROUND

The round shape of the package provides efficient heat dissipation and allows for better thermal management.

Repetitive Peak Reverse Voltage: 2200 V

The high reverse voltage rating ensures protection against voltage spikes and surges, enhancing the reliability of the SCR.

No. of Terminals: 3

Having 3 terminals simplifies the connections and makes it easy to interface with other components in the circuit.

Package Style (Meter): DISK BUTTON

The disk button package style is compact and provides good mechanical protection, ensuring durability and longevity of the SCR.

Trigger Device Type: SCR

Being an SCR, this device offers high reliability, robustness, and efficiency in controlling power flow in various applications.

Maximum RMS On-state Current: 2740 A

With a high on-state current rating, this SCR can handle heavy loads and operate efficiently even under high current conditions.

Repetitive Peak Off-state Voltage: 2200 V

The high off-state voltage rating ensures that the SCR can withstand high voltage conditions without breakdown, making it suitable for industrial use.

Technical Specifications

Silicon Controlled Rectifiers (SCR) T1220N22TOFVT attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Infineon Technologies

Specs

Configuration:

Maximum DC Gate Trigger Current:

250 mA

JESD-30 Code:

O-XXDB-X3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

UNSPECIFIED

Package Shape:

ROUND

Package Style (Meter):

Maximum RMS On-state Current:

2740 A

Repetitive Peak Off-state Voltage:

2200 V

Repetitive Peak Reverse Voltage:

2200 V

Surface Mount:

YES

Terminal Form:

UNSPECIFIED

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

T1220N22TOFVT Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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