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2N6335

Texas Instruments

2N6335 by Texas Instruments

2N6335 by Texas Instruments is a SCR with max. DC Gate Trigger Current of 0.2mA, Non Repetitive Peak On-state Current of 20A, and Max. Leakage Current of 0.15mA. It is used in applications requiring high current switching such as power control circuits due to its single configuration and round package shape.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,803 parts In-Stock

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Digiode

USA . 1,768 parts In-Stock

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PUI

USA . 7 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 754 parts In-Stock

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$2.100

100+ parts

$2.048

1k+ parts

$2.037

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754

$2.100

$2.048

$2.037

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Parana Technologies

USA . 859 parts In-Stock

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$4.240

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-

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$4.675

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859

$4.240

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$4.675

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DigiPath Technology Company

USA . 1,427 parts In-Stock

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$4.669

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$4.295

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$4.669

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ChromeModa Solutions

Germany . 1,795 parts In-Stock

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$4.764

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$3.906

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$4.764

$3.906

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IDEA Electronic Components Group

UK . 190 parts In-Stock

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$4.764

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$4.288

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190

$4.764

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$4.288

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AZTECH Wire

Italy . 399 parts In-Stock

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$12.619

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399

$12.619

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Ampacity Inc.

Singapore . 1,501 parts In-Stock

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$20.100

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$20.100

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One Stop Electronics

USA . 1,442 parts In-Stock

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$28.100

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$28.100

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Northwest PG Solutions

USA . 1,673 parts In-Stock

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Corphita

USA . 1,485 parts In-Stock

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Native Components

USA . 864 parts In-Stock

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Corohmni

South Africa . 246 parts In-Stock

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Overview

Elevate your electronics with the Texas Instruments 2N6335 SCR. Crafted with precision and quality, this Silicon Controlled Rectifier is designed to deliver reliable performance in a variety of applications. From power supplies to motor control, this versatile component offers exceptional value and benefits for customers seeking efficiency and durability. Trust in Texas Instruments' expertise and innovation to take your projects to the next level with the 2N6335.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for efficient control and triggering of the SCR.

Non Repetitive Peak On-state Current: 20 A

High non-repetitive current handling capability makes this SCR suitable for applications where peak currents may occur.

Repetitive Peak Reverse Voltage: 200 V

Ability to withstand high reverse voltages makes this SCR versatile and reliable in various circuit configurations.

Maximum Operating Temperature: 150 °C

High operating temperature range ensures stable performance even in demanding thermal conditions.

Maximum RMS On-state Current: 2 A

Higher RMS current rating allows for continuous operation without overheating or failure.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N6335 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Additional Features:

SENSITIVE GATE, FAST SWITCHING SPEED

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-39

JESD-30 Code:

O-MBCY-W3

Maximum Leakage Current:

.15 mA

Non Repetitive Peak On-state Current:

20 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

2 A

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

2 A

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

2N6335 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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