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2N6336

Texas Instruments

2N6336 by Texas Instruments

2N6336 by Texas Instruments is a single SCR with max on-state current of 2A and non-repetitive peak current of 20A. It has a trigger voltage of 0.8V and is ideal for applications requiring high power control such as motor drives and lighting systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,828 parts In-Stock

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4,828

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Digiode

USA . 1,839 parts In-Stock

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1,839

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Electronic Expediters

USA . 516 parts In-Stock

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516

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Mil-Aero Solutions, Inc.

USA . 43 parts In-Stock

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PUI

USA . 33 parts In-Stock

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Northwest PG Solutions

USA . 2,247 parts In-Stock

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$3.262

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$3.262

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Parana Technologies

USA . 83 parts In-Stock

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$3.886

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$4.365

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83

$3.886

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$4.365

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ChromeModa Solutions

Germany . 2,345 parts In-Stock

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$4.366

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$3.580

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2,345

$4.366

$3.580

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IDEA Electronic Components Group

UK . 1,922 parts In-Stock

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$4.366

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$3.929

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One Stop Electronics

USA . 1,611 parts In-Stock

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$18.100

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$18.100

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AZTECH Wire

Italy . 738 parts In-Stock

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$19.877

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738

$19.877

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DigiPath Technology Company

USA . 1,191 parts In-Stock

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$3.936

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$3.936

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Corphita

USA . 1,181 parts In-Stock

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Native Components

USA . 922 parts In-Stock

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$2.876

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922

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$2.876

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Overview

Unleash the power of the 2N6336 by Texas Instruments, a top-tier Silicon Controlled Rectifier that guarantees exceptional quality and performance. With Texas Instruments' renowned reputation for excellence, this SCR stands out in its category with a single configuration, maximum on-state current of 2A, and impressive triggering capabilities. Ideal for a wide range of applications, this product offers customers unrivaled value, reliability, and efficiency. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations every time.

Feature Benefit Bullets

Package Body Material: METAL

Metal packages provide excellent thermal conductivity, helping in dissipating heat efficiently and making the product durable.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current ensures energy efficiency and precise control over switching operations.

Configuration: SINGLE

Single configuration makes installation and maintenance easier compared to multiple configurations.

Maximum On-state Current: 2 A

Capable of handling moderate current loads, suitable for a wide range of applications.

Repetitive Peak Reverse Voltage: 300 V

Offers reliable performance and protection against reverse voltage spikes.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N6336 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Additional Features:

SENSITIVE GATE, FAST SWITCHING SPEED

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-39

JESD-30 Code:

O-MBCY-W3

Maximum Leakage Current:

.15 mA

Non Repetitive Peak On-state Current:

20 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

2 A

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

2 A

Repetitive Peak Off-state Voltage:

300 V

Repetitive Peak Reverse Voltage:

300 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

2N6336 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-01-016-2782, 5961010162782

NIIN

010162782

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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