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2N6394

Onsemi

2N6394 by Onsemi

The Onsemi 2N6394 is a single SCR with max DC gate trigger current of 30mA and non-repetitive peak on-state current of 100A. It is used in applications requiring a max on-state current of 5A, such as power control circuits. Operating temperature ranges from -40 to 125 °C.

Median Price

$0.862

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 500 parts In-Stock

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-

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$0.846

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$0.702

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$0.626

500

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$0.846

$0.702

$0.626

Verical

USA . 500 parts In-Stock

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$0.877

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$0.782

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$0.877

$0.782

Distributors (In-Stock)

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Digiode

USA . 879 parts In-Stock

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$0.658

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$0.658

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TEDSS.com

USA . 99 parts In-Stock

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$1.000

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$0.750

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American Microsemiconductor Inc.

USA . 12 parts In-Stock

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$5.890

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Vyrian

USA . 4,032 parts In-Stock

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Atlantic Semiconductor

USA . 1,277 parts In-Stock

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Bristol Electronics

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Mil-Aero Solutions, Inc.

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Electronic Expediters

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DF Sales Co.

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DF Sales Co.

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MISTER SPROCKETS

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Prism Electronics

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ACDS - Activité Composants Distribution Service

France . 111 parts In-Stock

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ECAB

Sweden . 30 parts In-Stock

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Inland Empire Components Inc.

USA . 29 parts In-Stock

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Electronics Depot

USA . 19 parts In-Stock

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First Choice Components Inc.

USA . 17 parts In-Stock

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Tech-Mark Corp

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LittleDiode

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Lakeview Electronics

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Distributors (Availability)

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Corphita

USA . 853 parts In-Stock

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$0.624

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853

$0.624

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Corohmni

South Africa . 421 parts In-Stock

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$0.693

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Microchip USA

USA . 310 parts In-Stock

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$4.355

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Native Components

USA . 428 parts In-Stock

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$16.690

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Northwest PG Solutions

USA . 1,963 parts In-Stock

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$18.359

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$16.523

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Component Stockers USA

USA . 410 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Kepictronics

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QUARKTWIN TECHNOLOGY LTD

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Authorized Procurement Solutions

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Kulean Microsystems

USA . 6,302 parts In-Stock

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Problanco Electronics

Mexico . 5,360 parts In-Stock

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SupplyDigital Components

Austria . 3,520 parts In-Stock

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TANS Electronics

Latvia . 2,699 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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UHIMA Technologies

Türkiye . 467 parts In-Stock

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Perfect Parts

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Assy Fe

Spain . 244 parts In-Stock

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Overview

Discover the quality and reliability of Onsemi with the 2N6394 Silicon Controlled Rectifiers. This versatile component offers a range of applications, from power control in industrial equipment to lighting systems. With a maximum on-state current of 5A and a non-repetitive peak on-state current of 100A, this SCR provides customers with superior performance and efficiency. Trust Onsemi for top-notch products that deliver exceptional value and benefits for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the component, making it durable and reliable in various applications.

Maximum DC Gate Trigger Current: 30 mA

This low gate trigger current ensures efficient operation and control of the SCR, leading to better performance and reliability.

Configuration: SINGLE

The single configuration simplifies the circuit design and connection, making it easier to integrate into different electronic systems.

Repetitive Peak On-state Current: 100 A

High on-state current capability allows the SCR to handle heavy loads and high power requirements, making it suitable for industrial applications.

Maximum On-state Current: 5 A

With a maximum on-state current of 5 A, this SCR is versatile and can be used in a wide range of electronic devices and control systems.

Maximum Operating Temperature: 125 °C

The high operating temperature range ensures the SCR can withstand harsh environmental conditions and operate reliably in different situations.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier (SCR), this device provides precise control over the switching of current, making it ideal for various power control applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N6394 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

60 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

100 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

50 V

Repetitive Peak Reverse Voltage:

50 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

SCR

Trade Compliance

2N6394 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-01-081-9196, 5961010819196

NIIN

010819196

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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