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2N6334

Texas Instruments

2N6334 by Texas Instruments

2N6334 by Texas Instruments is a SCR with max. on-state current of 2A, non-repetitive peak on-state current of 20A, and max. DC gate trigger current of 0.2mA. It is used in applications requiring high power control such as motor drives and industrial heating systems due to its robust design and performance capabilities.

Median Price

$13.950

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 10 parts In-Stock

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$13.950

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Vyrian

USA . 4,619 parts In-Stock

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Digiode

USA . 2,501 parts In-Stock

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2,501

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PUI

USA . 36 parts In-Stock

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Native Components

USA . 516 parts In-Stock

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$0.920

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Northwest PG Solutions

USA . 1,410 parts In-Stock

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$1.012

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$1.012

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Parana Technologies

USA . 2,268 parts In-Stock

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$2.234

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$2.737

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$2.234

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DigiPath Technology Company

USA . 1,465 parts In-Stock

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$2.460

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$2.263

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1,465

$2.460

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ChromeModa Solutions

Germany . 1,486 parts In-Stock

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$2.510

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$2.058

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$2.510

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IDEA Electronic Components Group

UK . 1,150 parts In-Stock

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$2.510

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$2.259

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$2.510

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AZTECH Wire

Italy . 803 parts In-Stock

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$11.854

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One Stop Electronics

USA . 1,461 parts In-Stock

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$27.100

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Corphita

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Overview

Unleash the power of the Texas Instruments 2N6334 Silicon Controlled Rectifier (SCR) for your electronic projects. Designed with precision and quality in mind, this SCR offers a single configuration with a maximum on-state current of 2A, making it perfect for a wide range of applications. Whether you're building circuits or controlling power supplies, the 2N6334 delivers exceptional performance and reliability. Trust in Texas Instruments to provide cutting-edge technology that exceeds expectations. Elevate your projects with the 2N6334 SCR today!

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides durability and heat dissipation, making the SCR reliable for long-term usage.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current ensures efficient and effective control over the switching of the SCR.

Configuration: SINGLE

Single configuration simplifies the setup and operation of the SCR, making it user-friendly.

Repetitive Peak On-state Current: 20 A

High on-state current rating allows the SCR to handle heavy loads with ease.

Package Shape: ROUND

Round package shape offers versatility in mounting options and minimizes space requirements.

Terminal Form: WIRE

Wire terminal form facilitates easy connection and installation of the SCR.

Maximum On-state Current: 2 A

Adequate on-state current rating suitable for various applications and devices.

Maximum Leakage Current: 0.15 mA

Low leakage current ensures minimal power loss and enhances energy efficiency.

Repetitive Peak Reverse Voltage: 100 V

High reverse voltage rating provides protection against voltage spikes and surges.

No. of Terminals: 3

Three terminals offer flexibility in circuit connections and configurations.

Package Style (Meter): CYLINDRICAL

Cylindrical package style simplifies integration and mounting of the SCR in various systems.

Maximum Operating Temperature: 150 °C

High operating temperature range allows the SCR to perform reliably in demanding environments.

Trigger Device Type: SCR

SCR trigger device type ensures precise and controlled switching of the semiconductor device.

Minimum Operating Temperature: -40 °C

Wide temperature range enables the SCR to operate efficiently in extreme cold conditions.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy mounting and connection within a circuit or system.

Maximum RMS On-state Current: 2 A

High RMS current rating supports continuous and reliable operation of the SCR under varying load conditions.

Maximum DC Gate Trigger Voltage: 0.8 V

Low gate trigger voltage ensures quick and efficient control over the SCR's switching behavior.

Case Connection: ANODE

Anode case connection simplifies circuit design and enhances electrical connectivity.

Repetitive Peak Off-state Voltage: 100 V

High off-state voltage rating ensures protection against overvoltage conditions and improves device reliability.

Maximum Holding Current: 5 mA

Adequate holding current rating helps in maintaining the SCR in the off-state position effectively.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N6334 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Additional Features:

SENSITIVE GATE, FAST SWITCHING SPEED

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-39

JESD-30 Code:

O-MBCY-W3

Maximum Leakage Current:

.15 mA

Non Repetitive Peak On-state Current:

20 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

2 A

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

2 A

Repetitive Peak Off-state Voltage:

100 V

Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

2N6334 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-01-384-6084, 5961013846084

NIIN

013846084

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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