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TIC39C

Texas Instruments

TIC39C by Texas Instruments

TIC39C by Texas Instruments is a single SCR with 20A non-repetitive peak on-state current and 2A max on-state current. It has a trigger voltage of 1V, ideal for applications requiring high power control in industrial settings. The package style is cylindrical with metal body material, suitable for bottom terminal position installations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,000 parts In-Stock

1+ parts

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4,000

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Digiode

USA . 2,651 parts In-Stock

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2,651

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 689 parts In-Stock

1+ parts

$1.905

100+ parts

-

1k+ parts

$2.443

10k+ parts

-

689

$1.905

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$2.443

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DigiPath Technology Company

USA . 1,348 parts In-Stock

1+ parts

$2.098

100+ parts

$1.930

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-

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1,348

$2.098

$1.930

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Semicontronic

India . 1,262 parts In-Stock

1+ parts

$2.100

100+ parts

$2.048

1k+ parts

$2.037

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1,262

$2.100

$2.048

$2.037

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ChromeModa Solutions

Germany . 3,730 parts In-Stock

1+ parts

$2.141

100+ parts

$1.756

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3,730

$2.141

$1.756

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IDEA Electronic Components Group

UK . 1,486 parts In-Stock

1+ parts

$2.141

100+ parts

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$1.927

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1,486

$2.141

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$1.927

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AZTECH Wire

Italy . 603 parts In-Stock

1+ parts

$6.562

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603

$6.562

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Ampacity Inc.

Singapore . 1,341 parts In-Stock

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$10.100

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1,341

$10.100

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One Stop Electronics

USA . 779 parts In-Stock

1+ parts

$23.100

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779

$23.100

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Corphita

USA . 1,515 parts In-Stock

1+ parts

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1,515

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Corohmni

South Africa . 306 parts In-Stock

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306

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Overview

Unlock the power of reliable and efficient electrical control with the TIC39C by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees quality and durability in their products. The TIC39C falls under the category of Silicon Controlled Rectifiers (SCR), offering precise current control and protection in various applications. With its high performance and low maintenance design, this SCR provides value and benefits to customers looking for a dependable solution for their electrical control needs. Elevate your projects with the TIC39C and experience the advantages it brings to your work.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current ensures efficient and precise control over the switching of the SCR, making it suitable for various applications.

Non Repetitive Peak On-state Current: 20 A

High peak on-state current capability allows the SCR to handle heavy loads and transient surges effectively.

Maximum On-state Current: 2 A

With a maximum on-state current of 2 A, this SCR can handle moderate power requirements efficiently.

Repetitive Peak Reverse Voltage: 300 V

The high reverse voltage rating makes this SCR suitable for applications where reverse voltage protection is necessary.

Maximum Operating Temperature: 140 °C

The SCR can operate reliably at elevated temperatures, making it suitable for demanding environments.

Maximum Holding Current: 5 mA

The low holding current ensures that the SCR remains in the conducting state after triggering, providing stability in operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TIC39C attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

5 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-39

JESD-30 Code:

O-MBCY-W3

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

20 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

2 A

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

2 A

Repetitive Peak Off-state Voltage:

300 V

Repetitive Peak Reverse Voltage:

300 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TIC39C Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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