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TIC36

Texas Instruments

TIC36 by Texas Instruments

TIC36 by Texas Instruments is a single SCR with max. on-state current of 0.4A and trigger voltage of 0.75V, ideal for applications requiring precise gate control in circuits with low power requirements. Its metal package body and wire terminal form make it suitable for use in environments with temp range from -55 to 125 °C, offering reliable performance under varying conditions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,425 parts In-Stock

1+ parts

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3,425

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Digiode

USA . 2,940 parts In-Stock

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2,940

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,328 parts In-Stock

1+ parts

$4.447

100+ parts

-

1k+ parts

$4.876

10k+ parts

-

2,328

$4.447

-

$4.876

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ChromeModa Solutions

Germany . 2,472 parts In-Stock

1+ parts

$4.997

100+ parts

$4.098

1k+ parts

-

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2,472

$4.997

$4.098

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IDEA Electronic Components Group

UK . 195 parts In-Stock

1+ parts

$4.997

100+ parts

-

1k+ parts

$4.497

10k+ parts

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195

$4.997

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$4.497

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Ampacity Inc.

Singapore . 867 parts In-Stock

1+ parts

$6.100

100+ parts

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867

$6.100

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AZTECH Wire

Italy . 302 parts In-Stock

1+ parts

$11.415

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302

$11.415

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One Stop Electronics

USA . 1,247 parts In-Stock

1+ parts

$17.100

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1,247

$17.100

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Semicontronic

India . 1,235 parts In-Stock

1+ parts

$30.100

100+ parts

$29.348

1k+ parts

$29.197

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1,235

$30.100

$29.348

$29.197

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DigiPath Technology Company

USA . 1,040 parts In-Stock

1+ parts

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$4.505

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1,040

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$4.505

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Corphita

USA . 903 parts In-Stock

1+ parts

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903

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Corohmni

South Africa . 410 parts In-Stock

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410

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Overview

Experience the exceptional quality and reliability of Texas Instruments with the TIC36 Silicon Controlled Rectifier (SCR). Ideal for a wide range of applications, this SCR offers superior performance and durability. From industrial machinery to household appliances, the TIC36 provides customers with unmatched value and benefits, ensuring optimal functionality and efficiency. Trust in Texas Instruments for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides durability and heat dissipation, making the SCR reliable for high-power applications.

Maximum DC Gate Trigger Current: 0.02 mA

Low gate trigger current allows for precise control and efficient operation of the SCR.

Configuration: SINGLE

Single configuration simplifies the design and installation process, making it easier to use in various projects.

Non Repetitive Peak On-state Current: 3 A

High on-state current capability allows the SCR to handle heavy loads and power surges effectively.

Package Shape: ROUND

Round package shape ensures easy mounting and installation, suitable for compact spaces.

Terminal Form: WIRE

Wire terminal form provides easy connection and secure attachment, enhancing the reliability of the SCR.

Maximum On-state Current: 0.4 A

High on-state current rating ensures stable and consistent performance under load conditions.

Maximum Leakage Current: 0.1 mA

Low leakage current enhances the efficiency and reliability of the SCR by minimizing power losses.

Repetitive Peak Reverse Voltage: 5 V

Low reverse voltage rating allows for safe and efficient operation in various circuit configurations.

No. of Terminals: 3

Having 3 terminals makes it easy to connect the SCR in a circuit, providing flexibility in design and implementation.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides mechanical strength and protection, ensuring long-term performance and reliability.

Maximum Operating Temperature: 125 °C

High operating temperature rating allows the SCR to be used in demanding environments without the risk of overheating.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this product offers precise control and high switching speeds, suitable for various applications.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows the SCR to function reliably in cold environments without performance degradation.

Terminal Position: BOTTOM

Bottom terminal position ensures easy connectivity and secure mounting, making installation quick and convenient.

Maximum RMS On-state Current: 0.4 A

High RMS on-state current rating allows the SCR to handle continuous operation without overheating or performance issues.

Maximum DC Gate Trigger Voltage: 0.75 V

Low gate trigger voltage ensures efficient control and operation of the SCR, reducing power consumption and heat dissipation.

Case Connection: ANODE

Anode case connection simplifies the installation process and ensures proper circuit connection, enhancing the reliability of the SCR.

Repetitive Peak Off-state Voltage: 30 V

High off-state voltage rating allows the SCR to withstand voltage spikes and transients, ensuring reliable operation in harsh electrical environments.

Maximum Holding Current: 2 mA

High holding current capability ensures the SCR remains in the on-state even under high temperatures or voltage fluctuations, enhancing its reliability in critical applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TIC36 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Additional Features:

RADIATION RESISTANT

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

.02 mA

Maximum DC Gate Trigger Voltage:

.75 V

Maximum Holding Current:

2 mA

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

3 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.4 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

.4 A

Repetitive Peak Off-state Voltage:

30 V

Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TIC36 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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