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2N3008

Texas Instruments

2N3008 by Texas Instruments

2N3008 by Texas Instruments is a SCR with max. DC Gate Trigger Current of 0.2mA, Non Repetitive Peak On-state Current of 6A, and Max. RMS On-state Current of 0.35A. It is used in applications requiring precise current control like power supplies, motor controls, and lighting systems due to its high reliability and low leakage current characteristics.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 8,170 parts In-Stock

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Digiode

USA . 4,278 parts In-Stock

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Electronic Expediters

USA . 78 parts In-Stock

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Native Components

USA . 890 parts In-Stock

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$0.036

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$0.035

890

$0.036

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$0.035

Parana Technologies

USA . 2,174 parts In-Stock

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$2.921

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$3.419

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DigiPath Technology Company

USA . 105 parts In-Stock

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$3.216

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$2.959

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IDEA Electronic Components Group

UK . 2,002 parts In-Stock

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$3.282

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$2.954

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$3.282

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ChromeModa Solutions

Germany . 1,541 parts In-Stock

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$3.282

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$2.691

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AZTECH Wire

Italy . 497 parts In-Stock

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$5.494

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One Stop Electronics

USA . 472 parts In-Stock

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$15.100

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Corphita

USA . 4,598 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Northwest PG Solutions

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Overview

Discover the power of the 2N3008 by Texas Instruments, a top-of-the-line Silicon Controlled Rectifier designed to deliver reliable performance in a variety of applications. With a focus on quality and durability, Texas Instruments ensures that this SCR exceeds industry standards, providing customers with a dependable solution for their electronic needs. Whether you're looking to control power in industrial equipment or regulate voltage in consumer electronics, the 2N3008 offers value, efficiency, and peace of mind. Upgrade to Texas Instruments for unmatched performance and reliability.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal package body increases durability and heat dissipation capability, making the product suitable for high power applications.

Maximum DC Gate Trigger Current: 0.2 mA

The low gate trigger current allows for precise control and triggering of the SCR, ensuring accurate switching in electronic circuits.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes the product easy to integrate into various electronic systems.

Non Repetitive Peak On-state Current: 6 A

The high non-repetitive peak current handling capability makes the SCR suitable for applications requiring short duration high current pulses.

Package Shape: ROUND

The round package shape allows for easy mounting and installation in circular or cylindrical enclosures.

Terminal Form: WIRE

Wire terminal form enables easy connection and mounting flexibility during installation.

Maximum On-state Current: 0.25 A

The high on-state current rating allows the SCR to handle moderate to high current loads efficiently.

Maximum Leakage Current: 0.1 mA

Low leakage current ensures minimal power loss and high efficiency in standby mode or when the SCR is in off-state.

Repetitive Peak Reverse Voltage: 200 V

The high reverse voltage rating ensures reliable and safe operation in applications with varying reverse voltage conditions.

No. of Terminals: 3

Three terminals provide easy connection and control options in electronic circuits.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers compact size and efficient thermal management for space-constrained applications.

Maximum Operating Temperature: 155 °C

High maximum operating temperature allows the SCR to withstand harsh environmental conditions and high temperature applications.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier (SCR), the device offers stable and reliable switching performance for various applications.

Minimum Operating Temperature: -60 °C

Low minimum operating temperature range enables the SCR to function effectively in cold environments or during startup conditions.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy circuit board mounting and connection in electronic assemblies.

Maximum RMS On-state Current: 0.35 A

High maximum RMS on-state current rating allows the SCR to handle continuous current loads efficiently without overheating.

Maximum DC Gate Trigger Voltage: 0.8 V

Low gate trigger voltage ensures efficient and reliable triggering of the SCR at lower input voltages.

Case Connection: ANODE

Anode case connection simplifies the circuit design and improves heat dissipation, enhancing the overall performance of the SCR.

Repetitive Peak Off-state Voltage: 200 V

The high repetitive peak off-state voltage rating ensures reliable and safe operation in applications with varying off-state voltage conditions.

Maximum Holding Current: 5 mA

High holding current rating ensures the SCR remains in the on-state even after the gate trigger signal is removed, providing stable operation in the circuit.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N3008 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Additional Features:

SENSITIVE GATE, FAST SWITCHING SPEED

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

6 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.25 A

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-60 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

.35 A

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

2N3008 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-99-659-3363, 5961996593363, 5961-99-118-0850, 5961991180850

NIIN

996593363, 991180850

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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