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5961-01-302-2057

Texas Instruments

5961-01-302-2057 by Texas Instruments

The Texas Instruments 5961-01-302-2057 is a Silicon Controlled Rectifier (SCR) with a max DC Gate Trigger Current of 20mA, Non Repetitive Peak On-state Current of 100A, and Max On-state Current of 12A. It operates b/w -40 to 110°C and is ideal for applications requiring precise current control.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,735 parts In-Stock

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Digiode

USA . 2,389 parts In-Stock

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2,389

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Parana Technologies

USA . 1,977 parts In-Stock

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$2.318

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$2.816

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1,977

$2.318

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$2.816

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ChromeModa Solutions

Germany . 5,030 parts In-Stock

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$2.604

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$2.135

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$2.604

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IDEA Electronic Components Group

UK . 87 parts In-Stock

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$2.604

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$2.344

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87

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AZTECH Wire

Italy . 892 parts In-Stock

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$7.699

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One Stop Electronics

USA . 643 parts In-Stock

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$19.100

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643

$19.100

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Semicontronic

India . 546 parts In-Stock

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$20.100

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$19.598

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$19.497

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546

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Corphita

USA . 4,730 parts In-Stock

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DigiPath Technology Company

USA . 2,355 parts In-Stock

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$2.348

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Northwest PG Solutions

USA . 697 parts In-Stock

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Corohmni

South Africa . 401 parts In-Stock

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Native Components

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Overview

Discover the power of Texas Instruments' 5961-01-302-2057 Silicon Controlled Rectifiers (SCR) and unlock a world of possibilities in electronic applications. With a maximum DC Gate Trigger Current of 20 mA and a Non Repetitive Peak On-state Current of 100 A, this SCR offers unmatched reliability and performance. From industrial machinery to consumer electronics, this versatile component delivers seamless control and efficiency. Trust Texas Instruments for superior quality and innovation, and experience the value of precision engineering.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 20 mA

This high trigger current ensures reliable and consistent activation of the SCR, providing stable performance in various applications.

Non Repetitive Peak On-state Current: 100 A

The high non-repetitive peak current allows the SCR to handle short-term surges in current without getting damaged, making it suitable for high-power applications.

Maximum On-state Current: 12 A

The maximum on-state current rating of 12 A indicates the SCR's ability to handle moderate levels of continuous current flow, making it versatile for different load requirements.

Maximum Leakage Current: 2 mA

The low leakage current minimizes power loss and ensures efficiency in operation, making the SCR a cost-effective choice for energy-sensitive applications.

Maximum Operating Temperature: 110 °C

The high maximum operating temperature allows the SCR to perform reliably in demanding environments without overheating, ensuring long-term durability.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier (SCR), this product offers precise control over switching operations, making it ideal for applications requiring accurate current regulation.

Maximum DC Gate Trigger Voltage: 1.5 V

The low gate trigger voltage ensures efficient operation and minimizes power consumption, making the SCR suitable for low-voltage applications.

Repetitive Peak Off-state Voltage: 200 V

With a high repetitive peak off-state voltage, this SCR can withstand voltage spikes and surges, making it reliable for applications with voltage fluctuations.

Minimum Critical Rate of Rise of Off-state Voltage: 100 V/us

The minimum critical rate of rise of off-state voltage ensures fast response to voltage changes, enhancing the SCR's reliability in dynamic operating conditions.

Maximum Holding Current: 40 mA

The high holding current capacity allows the SCR to stay in the on-state even after the trigger signal is removed, ensuring stability in applications with varying signal durations.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 5961-01-302-2057 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

20 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

40 mA

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

100 A

Maximum On-state Current:

12 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

5961-01-302-2057 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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