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5961-01-169-6518

Texas Instruments

5961-01-169-6518 by Texas Instruments

The Texas Instruments 5961-01-169-6518 is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 20mA, Non Repetitive Peak On-state Current of 80A, and Max On-state Current of 8A. It operates b/w -40 to 110°C and is ideal for applications requiring precise current control in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,602 parts In-Stock

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6,602

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Digiode

USA . 4,133 parts In-Stock

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4,133

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,685 parts In-Stock

1+ parts

$4.443

100+ parts

-

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$4.870

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1,685

$4.443

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$4.870

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DigiPath Technology Company

USA . 834 parts In-Stock

1+ parts

$4.892

100+ parts

$4.501

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-

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834

$4.892

$4.501

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IDEA Electronic Components Group

UK . 2,320 parts In-Stock

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$4.992

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$4.493

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2,320

$4.992

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$4.493

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ChromeModa Solutions

Germany . 1,967 parts In-Stock

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$4.992

100+ parts

$4.093

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1,967

$4.992

$4.093

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Ampacity Inc.

Singapore . 354 parts In-Stock

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$16.100

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354

$16.100

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Semicontronic

India . 452 parts In-Stock

1+ parts

$17.100

100+ parts

$16.672

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$16.587

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452

$17.100

$16.672

$16.587

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AZTECH Wire

Italy . 234 parts In-Stock

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$17.921

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234

$17.921

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One Stop Electronics

USA . 501 parts In-Stock

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$19.100

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501

$19.100

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Corphita

USA . 3,654 parts In-Stock

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Northwest PG Solutions

USA . 1,304 parts In-Stock

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$3.451

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1,304

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$3.451

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Native Components

USA . 597 parts In-Stock

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$3.415

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597

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$3.415

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Corohmni

South Africa . 320 parts In-Stock

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Overview

Enhance your electronic projects with the 5961-01-169-6518 by Texas Instruments, a high-quality Silicon Controlled Rectifier (SCR) designed to deliver superior performance. Manufactured by Texas Instruments, this SCR offers a maximum DC Gate Trigger Current of 20 mA and a Non Repetitive Peak On-state Current of 80 A. Whether you're working on power supplies, motor controls, or lighting systems, this versatile component guarantees reliable operation and efficient functionality. Trust in Texas Instruments for cutting-edge technology and unlock endless possibilities for your applications.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 20 mA

This spec ensures reliable gate triggering of the SCR, providing stable and consistent performance.

Non Repetitive Peak On-state Current: 80 A

Ability to handle high peak currents makes this SCR suitable for applications requiring occasional high power surges.

Maximum On-state Current: 8 A

Capable of handling moderate current loads, making it versatile for a wide range of applications.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power loss when the SCR is in the off-state, leading to better energy efficiency.

Maximum Operating Temperature: 110 °C

High operating temperature range allows the SCR to function reliably in harsh environments without overheating.

Trigger Device Type: SCR

Being a silicon-controlled rectifier, this device offers precise control over current flow and power regulation.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage enables efficient triggering of the SCR with minimal power input, enhancing overall energy efficiency.

Repetitive Peak Off-state Voltage: 100 V

Capable of withstanding high off-state voltages, making it suitable for applications with varying power requirements.

Minimum Critical Rate of Rise of Off-state Voltage: 100 V/us

Fast rate of rise of off-state voltage ensures rapid response to changes in voltage levels, enhancing overall performance.

Maximum Holding Current: 40 mA

High holding current ensures the SCR remains in the on-state without requiring continuous triggering signal, improving overall system stability.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 5961-01-169-6518 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

20 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

40 mA

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

80 A

Maximum On-state Current:

8 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

5961-01-169-6518 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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