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5961-01-071-1764

Texas Instruments

5961-01-071-1764 by Texas Instruments

The Texas Instruments 5961-01-071-1764 is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 20mA, Non Repetitive Peak On-state Current of 100A, and Max On-state Current of 12A. It operates b/w -40 to 110°C and is ideal for applications requiring precise current control in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,979 parts In-Stock

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Digiode

USA . 4,709 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 385 parts In-Stock

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$0.116

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$0.111

385

$0.116

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$0.111

Northwest PG Solutions

USA . 2,006 parts In-Stock

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$0.127

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$0.112

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$0.127

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$0.112

Ampacity Inc.

Singapore . 1,021 parts In-Stock

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$2.100

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$2.100

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Parana Technologies

USA . 1,654 parts In-Stock

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$3.167

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$3.687

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$3.167

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$3.687

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DigiPath Technology Company

USA . 607 parts In-Stock

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$3.487

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$3.208

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607

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$3.208

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ChromeModa Solutions

Germany . 2,710 parts In-Stock

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$3.558

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$2.918

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IDEA Electronic Components Group

UK . 1,331 parts In-Stock

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$3.558

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$3.202

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AZTECH Wire

Italy . 615 parts In-Stock

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$19.513

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One Stop Electronics

USA . 1,474 parts In-Stock

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$29.100

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$29.100

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Semicontronic

India . 286 parts In-Stock

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$29.100

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$28.372

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$28.227

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Corphita

USA . 3,021 parts In-Stock

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Corohmni

South Africa . 367 parts In-Stock

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Overview

Upgrade your electronic devices with the high-quality 5961-01-071-1764 Silicon Controlled Rectifier by Texas Instruments. As a trusted manufacturer in the industry, Texas Instruments delivers top-notch products that meet rigorous standards. This SCR offers a maximum DC Gate Trigger Current of 20 mA and a Non Repetitive Peak On-state Current of 100 A, making it ideal for a wide range of applications. Whether you're looking to improve efficiency or enhance performance, this SCR provides reliable operation and unmatched durability. Invest in the Texas Instruments 5961-01-071-1764 for superior quality and exceptional value.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 20 mA

A low gate trigger current requirement allows for easier control and triggering of the SCR, enhancing its overall performance.

Non Repetitive Peak On-state Current: 100 A

With a high peak on-state current capability, this SCR can handle heavy loads without overheating or failing.

Maximum On-state Current: 12 A

The maximum on-state current of 12 A ensures that the SCR can handle moderate to high current applications effectively.

Maximum Leakage Current: 2 mA

Low leakage current helps in minimizing power losses and improves the efficiency of the SCR in standby or off states.

Maximum Operating Temperature: 110 °C

With a high operating temperature limit, this SCR is suitable for applications where temperature variations are common or high temperatures are expected.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier (SCR), this device offers reliable and efficient triggering for various industrial and commercial applications.

Minimum Operating Temperature: -40 °C

The SCR can operate effectively in extreme cold conditions, making it suitable for applications in harsh environments.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage ensures that the SCR can be easily controlled and activated with minimal input voltage, simplifying the control circuit design.

Repetitive Peak Off-state Voltage: 100 V

The high off-state voltage rating allows the SCR to withstand voltage spikes and fluctuations without breakdown, ensuring reliable operation.

Minimum Critical Rate of Rise of Off-state Voltage: 100 V/us

A high critical rate of rise of off-state voltage ensures that the SCR can respond quickly to voltage changes, enhancing its overall performance and protection capabilities.

Maximum Holding Current: 40 mA

The holding current capability of 40 mA ensures that the SCR remains in the on-state even after the gate signal is removed, providing stability in continuous operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 5961-01-071-1764 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

20 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

40 mA

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

100 A

Maximum On-state Current:

12 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

5961-01-071-1764 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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