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1B15CL10

Texas Instruments

1B15CL10 by Texas Instruments

1B15CL10 by Texas Instruments is a Silicon Controlled Rectifier with 50mA DC Gate Trigger Current, 30A Non Repetitive Peak On-state Current, and 1.5A Max On-state Current. It is ideal for applications requiring high current handling capabilities in circuits where controlled switching is essential.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,468 parts In-Stock

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7,468

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Digiode

USA . 3,873 parts In-Stock

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3,873

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,425 parts In-Stock

1+ parts

$2.636

100+ parts

-

1k+ parts

$3.126

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1,425

$2.636

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$3.126

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ChromeModa Solutions

Germany . 6,498 parts In-Stock

1+ parts

$2.962

100+ parts

$2.429

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6,498

$2.962

$2.429

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IDEA Electronic Components Group

UK . 1 parts In-Stock

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$2.962

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$2.666

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1

$2.962

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$2.666

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Semicontronic

India . 999 parts In-Stock

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$6.100

100+ parts

$5.948

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$5.917

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999

$6.100

$5.948

$5.917

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Ampacity Inc.

Singapore . 725 parts In-Stock

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$6.100

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725

$6.100

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One Stop Electronics

USA . 757 parts In-Stock

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$7.100

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757

$7.100

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AZTECH Wire

Italy . 880 parts In-Stock

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$10.827

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880

$10.827

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DigiPath Technology Company

USA . 2,037 parts In-Stock

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$2.671

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2,037

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$2.671

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Northwest PG Solutions

USA . 1,979 parts In-Stock

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$4.239

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1,979

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$4.239

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Corphita

USA . 1,528 parts In-Stock

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1,528

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Corohmni

South Africa . 137 parts In-Stock

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137

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Native Components

USA . 81 parts In-Stock

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$4.196

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81

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$4.196

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Overview

Elevate your electronic projects with the high-quality 1B15CL10 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers reliable Silicon Controlled Rectifiers (SCR) that offer unmatched performance and efficiency. From motor control to power supplies, this versatile SCR is perfect for a wide range of applications. Experience the value and benefits of this innovative product, designed to meet your needs and exceed your expectations. Trust Texas Instruments for top-notch quality and superior technology that will take your projects to the next level.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 50 mA

Having a high maximum DC gate trigger current allows for flexibility in triggering the SCR, making it suitable for a wide range of applications.

Non Repetitive Peak On-state Current: 30 A

The high non-repetitive peak on-state current capability ensures that the SCR can handle sudden spikes in current without getting damaged, making it reliable for high-power applications.

Maximum On-state Current: 1.5 A

With a maximum on-state current of 1.5 A, this SCR is suitable for medium-power applications where controlled current flow is required.

Maximum Leakage Current: 0.005 mA

The low maximum leakage current ensures that the SCR will not waste energy when in the off-state, leading to efficient operation.

Maximum Operating Temperature: 100 °C

With a high maximum operating temperature of 100°C, this SCR can withstand harsh environmental conditions and maintain stable performance.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this product is well-suited for applications requiring high current handling and voltage control capabilities.

Maximum DC Gate Trigger Voltage: 50 V

The low maximum DC gate trigger voltage simplifies the triggering mechanism and ensures reliable operation, making it user-friendly.

Repetitive Peak Off-state Voltage: 100 V

The high repetitive peak off-state voltage capability allows the SCR to withstand voltage spikes, making it durable and suitable for industrial environments.

Maximum Holding Current: 70 mA

The maximum holding current of 70 mA ensures that the SCR will remain in the on-state once triggered, providing stable and continuous operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 1B15CL10 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

50 V

Maximum Holding Current:

70 mA

Maximum Leakage Current:

.005 mA

Non Repetitive Peak On-state Current:

30 A

Maximum On-state Current:

1.5 A

Maximum Operating Temperature:

100 Cel

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

1B15CL10 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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