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2N2689

Texas Instruments

2N2689 by Texas Instruments

2N2689 by Texas Instruments is a Silicon Controlled Rectifier with 0.2 mA DC Gate Trigger Current, 2 A Non Repetitive Peak On-state Current, and 0.18 A Max On-state Current. It operates at a max temperature of 155°C. Ideal for applications requiring SCR trigger devices with 1 V DC Gate Trigger Voltage and 100 V Repetitive Peak Off-state Voltage.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 6,255 parts In-Stock

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Digiode

USA . 272 parts In-Stock

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Electronic Expediters

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Parana Technologies

USA . 1,923 parts In-Stock

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$2.279

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$2.779

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DigiPath Technology Company

USA . 1,619 parts In-Stock

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$2.510

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ChromeModa Solutions

Germany . 6,753 parts In-Stock

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$2.561

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IDEA Electronic Components Group

UK . 17 parts In-Stock

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$2.305

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Native Components

USA . 672 parts In-Stock

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$5.730

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AZTECH Wire

Italy . 507 parts In-Stock

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$11.803

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One Stop Electronics

USA . 1,447 parts In-Stock

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$25.100

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Northwest PG Solutions

USA . 206 parts In-Stock

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Corphita

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Overview

Unleash the power of the 2N2689 by Texas Instruments, a top-quality Silicon Controlled Rectifier that delivers unmatched performance and reliability. Manufactured by a trusted industry leader, this SCR is a versatile solution for a wide range of applications. With its low gate trigger current and high on-state current capabilities, this product offers exceptional value and benefits to customers looking for a reliable and efficient component. Whether you're in need of precise control in industrial equipment or robust protection in electronic devices, the 2N2689 is the perfect choice for your next project.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for efficient control of the SCR, making it a reliable choice for various applications.

Non Repetitive Peak On-state Current: 2 A

High peak on-state current capability ensures that the SCR can handle sudden surges of current without malfunctioning, making it suitable for high-power applications.

Maximum On-state Current: 0.18 A

The maximum on-state current rating indicates the continuous current-carrying capacity of the SCR, making it ideal for moderate power applications.

Maximum Leakage Current: 0.1 mA

Low leakage current minimizes power loss in the off-state condition, contributing to the efficiency of the SCR.

Maximum Operating Temperature: 155 °C

High operating temperature range allows the SCR to function reliably in various environments, making it versatile for different applications.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier emphasizes the reliability and precise control offered by this product in handling AC power control applications.

Maximum DC Gate Trigger Voltage: 1 V

Low gate trigger voltage ensures efficient triggering of the SCR, enabling precise control over switching operations.

Repetitive Peak Off-state Voltage: 100 V

The high off-state voltage capability allows the SCR to endure common voltage spikes within the circuit, enhancing its reliability and longevity.

Maximum Holding Current: 2 mA

The holding current rating indicates the minimum current required to keep the SCR in the on-state, providing stable operation in various load conditions.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N2689 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

2 mA

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

2 A

Maximum On-state Current:

.18 A

Maximum Operating Temperature:

155 Cel

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N2689 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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