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2N2653

Texas Instruments

2N2653 by Texas Instruments

2N2653 by Texas Instruments is a Silicon Controlled Rectifier (SCR) with 20mA DC Gate Trigger Current, 75A Non Repetitive Peak On-state Current, and 3A Max On-state Current. It is used in applications requiring SCR trigger devices with a max DC Gate Trigger Voltage of 3V and Repetitive Peak Off-state Voltage of 400V.

Median Price

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Lifecycle Status

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3

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1k+

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Vyrian

USA . 6,366 parts In-Stock

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Digiode

USA . 922 parts In-Stock

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Resion

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One Stop Electronics

USA . 147 parts In-Stock

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$2.100

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Parana Technologies

USA . 1,665 parts In-Stock

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$4.212

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$4.649

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DigiPath Technology Company

USA . 2,215 parts In-Stock

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$4.638

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$4.267

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ChromeModa Solutions

Germany . 5,820 parts In-Stock

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$3.881

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IDEA Electronic Components Group

UK . 1,203 parts In-Stock

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AZTECH Wire

Italy . 563 parts In-Stock

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Northwest PG Solutions

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Native Components

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Overview

Unleash the power of the Texas Instruments 2N2653 Silicon Controlled Rectifier! Manufactured by a trusted industry leader, this SCR offers unmatched quality and reliability. Whether you're looking to control power in industrial applications or regulate voltage in electronic circuits, the 2N2653 delivers exceptional performance. With a maximum DC Gate Trigger Current of 20 mA and Non Repetitive Peak On-state Current of 75 A, this versatile device provides the value and benefits you need to succeed. Upgrade your projects with the 2N2653 and experience the difference today!

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 20 mA

The low gate trigger current allows for efficient and reliable triggering of the SCR, ensuring consistent performance.

Non Repetitive Peak On-state Current: 75 A

The high peak on-state current capability makes this SCR suitable for applications that require handling high current levels.

Maximum On-state Current: 3 A

The maximum on-state current of 3 A allows for the SCR to handle moderate current loads effectively.

Maximum Leakage Current: 0.5 mA

The low leakage current ensures minimal power loss when the SCR is in the off state, increasing overall efficiency.

Trigger Device Type: SCR

Being an SCR, the device is specifically designed for high power applications where precise control of current flow is required.

Maximum DC Gate Trigger Voltage: 3 V

The low gate trigger voltage requirement simplifies the control circuitry needed to trigger the SCR, making it easier to integrate into designs.

Repetitive Peak Off-state Voltage: 400 V

The high off-state voltage rating ensures that the SCR can withstand voltage spikes and surges, increasing its reliability in various operating conditions.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N2653 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

20 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Leakage Current:

.5 mA

Non Repetitive Peak On-state Current:

75 A

Maximum On-state Current:

3 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N2653 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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