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2N2688

Texas Instruments

2N2688 by Texas Instruments

2N2688 by Texas Instruments is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 0.2 mA, Non Repetitive Peak On-state Current of 2 A, and Max On-state Current of 0.18 A. It operates b/w -60 to 155 °C and has a Repetitive Peak Off-state Voltage of 60 V. Ideal for power control applications in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,618 parts In-Stock

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Digiode

USA . 373 parts In-Stock

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Ampacity Inc.

Singapore . 1,334 parts In-Stock

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$1.100

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Parana Technologies

USA . 1,422 parts In-Stock

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$2.418

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$2.915

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DigiPath Technology Company

USA . 772 parts In-Stock

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$2.663

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ChromeModa Solutions

Germany . 1,955 parts In-Stock

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$2.717

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$2.228

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IDEA Electronic Components Group

UK . 620 parts In-Stock

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$2.717

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$2.445

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Semicontronic

India . 1,053 parts In-Stock

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$7.100

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$6.922

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$6.887

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One Stop Electronics

USA . 389 parts In-Stock

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$8.100

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AZTECH Wire

Italy . 878 parts In-Stock

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$8.900

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Northwest PG Solutions

USA . 2,175 parts In-Stock

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Corphita

USA . 1,297 parts In-Stock

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Native Components

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Corohmni

South Africa . 159 parts In-Stock

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Overview

Unleash the power of the 2N2688 by Texas Instruments, a top-quality Silicon Controlled Rectifier that guarantees reliability and performance like no other. Manufactured by the trusted brand Texas Instruments, this SCR is perfect for a wide range of applications. With a maximum on-state current of 0.18 A and a non-repetitive peak on-state current of 2 A, this product offers exceptional value and benefits to customers looking for a dependable solution. Upgrade your electronics with the 2N2688 and experience the difference today!

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current ensures energy efficiency and reliable operation.

Non Repetitive Peak On-state Current: 2 A

High peak on-state current allows for handling of sudden high power loads.

Maximum On-state Current: 0.18 A

Capable of handling continuous current flow without overheating.

Maximum Leakage Current: 0.1 mA

Low leakage current minimizes power loss and increases efficiency.

Maximum Operating Temperature: 155 °C

Wide operating temperature range makes it suitable for various environments.

Trigger Device Type: SCR

SCR technology offers high reliability and precise control over switching operations.

Minimum Operating Temperature: -60 °C

Operational in extreme cold conditions, ensuring reliable performance in harsh environments.

Maximum DC Gate Trigger Voltage: 1 V

Low gate trigger voltage allows for efficient triggering and control.

Repetitive Peak Off-state Voltage: 60 V

Able to withstand high off-state voltages for extended periods.

Maximum Holding Current: 2 mA

Capable of holding current flow at a constant level for stable operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N2688 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

2 mA

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

2 A

Maximum On-state Current:

.18 A

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

60 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N2688 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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