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2N2690

Texas Instruments

2N2690 by Texas Instruments

2N2690 by Texas Instruments is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 0.2 mA, Non Repetitive Peak On-state Current of 2 A, and Max On-state Current of 0.18 A. It operates b/w -60 to 155 °C and has a Repetitive Peak Off-state Voltage of 200 V. Ideal for power control applications requiring precise current regulation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,486 parts In-Stock

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Digiode

USA . 3,472 parts In-Stock

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Parana Technologies

USA . 2,135 parts In-Stock

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$3.246

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$301.425

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$2.921

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2,135

$3.246

$301.425

$2.921

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DigiPath Technology Company

USA . 1,173 parts In-Stock

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$3.574

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ChromeModa Solutions

Germany . 6,440 parts In-Stock

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$3.647

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$2.991

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$3.647

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IDEA Electronic Components Group

UK . 1,389 parts In-Stock

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$3.647

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$3.282

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AZTECH Wire

Italy . 611 parts In-Stock

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$8.679

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$8.679

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Semicontronic

India . 456 parts In-Stock

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$13.100

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$12.772

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$12.707

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456

$13.100

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One Stop Electronics

USA . 1,561 parts In-Stock

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$18.100

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$18.100

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Ampacity Inc.

Singapore . 337 parts In-Stock

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$18.100

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Corphita

USA . 604 parts In-Stock

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Northwest PG Solutions

USA . 497 parts In-Stock

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$3.528

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Native Components

USA . 303 parts In-Stock

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Corohmni

South Africa . 172 parts In-Stock

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Overview

Unlock the power of precision with the Texas Instruments 2N2690 Silicon Controlled Rectifiers. Designed for reliability and performance, this SCR offers superior quality and efficiency in a wide range of applications. From industrial machinery to consumer electronics, the 2N2690 delivers reliable performance and precise control. Trust Texas Instruments to provide the innovation and excellence you need to succeed in today's competitive market. Elevate your designs with the 2N2690 and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for precise control of the SCR, making it ideal for applications requiring low power consumption.

Non Repetitive Peak On-state Current: 2 A

The high peak on-state current capability of 2A allows for handling sudden surges in current, making this SCR suitable for applications with varying loads.

Maximum On-state Current: 0.18 A

The low maximum on-state current of 0.18A ensures efficient operation and prevents the SCR from overheating in high current applications.

Maximum Leakage Current: 0.1 mA

The low leakage current of 0.1 mA minimizes wasted power and improves the overall efficiency of the system where the SCR is utilized.

Maximum Operating Temperature: 155 °C

With a high maximum operating temperature of 155°C, this SCR can withstand elevated temperatures and is suitable for high-temperature environments.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier (SCR), this product offers reliable and efficient switching performance, making it an excellent choice for various industrial applications.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature of -60°C ensures that this SCR can function effectively in cold environments, providing versatility in its applications.

Maximum DC Gate Trigger Voltage: 1 V

The low gate trigger voltage of 1V ensures that the SCR can be easily controlled and triggered with minimal input power.

Repetitive Peak Off-state Voltage: 200 V

The high repetitive peak off-state voltage of 200V allows this SCR to handle voltage spikes and surges, making it suitable for applications with varying input voltages.

Maximum Holding Current: 2 mA

The maximum holding current of 2 mA ensures that the SCR remains in the on-state once triggered, providing stability in applications requiring continuous operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N2690 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

2 mA

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

2 A

Maximum On-state Current:

.18 A

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N2690 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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