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TIC126B

Texas Instruments

TIC126B by Texas Instruments

TIC126B by Texas Instruments is a single SCR with max. on-state current of 12A, trigger voltage of 1.5V, and max. DC gate trigger current of 20mA. It is used in applications requiring high power control such as motor speed control and lighting dimming due to its high non-repetitive peak on-state current capability of 100A.

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Lifecycle Status

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Vyrian

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Corel Iberica Componentes, S.L.

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Digiode

USA . 1,314 parts In-Stock

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ECAB

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Parana Technologies

USA . 2,078 parts In-Stock

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$2.646

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$245.718

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$2.381

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$2.646

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DigiPath Technology Company

USA . 957 parts In-Stock

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$2.914

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$2.680

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957

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ChromeModa Solutions

Germany . 2,998 parts In-Stock

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$2.973

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$2.438

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IDEA Electronic Components Group

UK . 752 parts In-Stock

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$2.676

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AZTECH Wire

Italy . 528 parts In-Stock

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$12.954

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One Stop Electronics

USA . 695 parts In-Stock

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$26.100

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Corphita

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Assy Fe

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Overview

Unleash the power of the TIC126B from Texas Instruments, a top-notch Silicon Controlled Rectifier that offers reliability and performance like no other. Manufactured by industry leader Texas Instruments, this SCR is designed to handle a wide range of applications with ease. With a maximum DC gate trigger current of 20mA and a non-repetitive peak on-state current of 100A, this product delivers unmatched quality and durability. From industrial machinery to consumer electronics, the TIC126B provides value, benefits, and advantages that are sure to impress customers looking for superior performance in their devices. Experience the difference with the TIC126B today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the internal components, making the SCR durable and reliable.

Maximum DC Gate Trigger Current: 20 mA

With a high maximum DC gate trigger current, this SCR can be easily controlled and triggered to switch on/off efficiently.

Configuration: SINGLE

The single configuration simplifies the setup and installation of the SCR, making it convenient for users.

Repetitive Peak On-state Current: 100 A

The high repetitive peak on-state current capability allows the SCR to handle high-power applications effectively.

Maximum On-state Current: 12 A

The maximum on-state current rating of 12 A ensures that the SCR can reliably conduct current within its specified limit.

Maximum Leakage Current: 2 mA

The low maximum leakage current helps in minimizing power loss and improving the efficiency of the SCR.

Repetitive Peak Reverse Voltage: 200 V

The repetitive peak reverse voltage rating of 200 V ensures that the SCR can withstand reverse voltage without breakdown.

Maximum Operating Temperature: 110 °C

The high maximum operating temperature makes the SCR suitable for a wide range of industrial applications where heat resistance is essential.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the SCR to function reliably even in cold environments.

Maximum RMS On-state Current: 12 A

The maximum RMS on-state current rating of 12 A indicates the average current-carrying capacity of the SCR under normal operating conditions.

Maximum DC Gate Trigger Voltage: 1.5 V

The low DC gate trigger voltage requirement makes it easy to trigger the SCR using low-power control signals.

Repetitive Peak Off-state Voltage: 200 V

The repetitive peak off-state voltage rating of 200 V ensures that the SCR can block voltage effectively when it is in the off state.

Minimum Critical Rate of Rise of Off-state Voltage: 100 V/us

The high minimum critical rate of rise of off-state voltage ensures that the SCR can respond quickly to changes in voltage, enhancing its overall performance.

Maximum Holding Current: 40 mA

The maximum holding current of 40 mA indicates the minimum current required to keep the SCR in the on state once it is triggered, ensuring stable operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TIC126B attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

20 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

40 mA

JESD-30 Code:

R-PSFM-T3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

100 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

12 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TIC126B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-01-302-2057, 5961013022057

NIIN

013022057

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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