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TIC106M

Texas Instruments

TIC106M by Texas Instruments

TIC106M by Texas Instruments is a Silicon Controlled Rectifier with max on-state current of 3.2A, trigger voltage of 1.2V, and off-state voltage of 600V. It is used in applications requiring precise gate triggering and high peak on-state current handling capabilities.

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Vyrian

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Digiode

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ComSIT Distribution GmbH

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Goldney Electronics S.L.

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Pegasus Components GmbH

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LittleDiode

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Huijzer Components

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Nova Conductors

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Digital Electronic Gebert Verwaltungs UG

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Tectiva GmbH

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Manotoh

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ABC Electronics Ltd.

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ICP Electronique

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ECAB

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Fibra_Brandt Electronic GMBH

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ACDS - Activité Composants Distribution Service

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One Stop Electronics

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Parana Technologies

USA . 1,918 parts In-Stock

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Advanced Electronics

New Zealand . 50 parts In-Stock

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DigiPath Technology Company

USA . 1,074 parts In-Stock

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ChromeModa Solutions

Germany . 6,186 parts In-Stock

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IDEA Electronic Components Group

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AZTECH Wire

Italy . 348 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality TIC106M from Texas Instruments. As a leading manufacturer of Silicon Controlled Rectifiers (SCR), Texas Instruments ensures top-notch performance and reliability in their products. The TIC106M is ideal for applications requiring precise control and regulation of electrical currents. With its impressive specifications and advanced features, this SCR offers unmatched value and benefits to customers seeking efficiency and durability in their designs. Upgrade your projects today with the TIC106M and experience the difference Texas Instruments can make.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current ensures efficient and reliable operation.

Non Repetitive Peak On-state Current: 30 A

Capable of handling high peak currents without failure, suitable for demanding applications.

Maximum On-state Current: 3.2 A

Can handle continuous currents up to 3.2A, making it versatile for various scenarios.

Maximum Leakage Current: 0.4 mA

Low leakage current ensures minimal power loss and high efficiency.

Repetitive Peak Reverse Voltage: 400 V

Can withstand up to 400V in reverse polarity, suitable for many different circuits.

Maximum Operating Temperature: 125 °C

Can operate at high temperatures without losing performance, increasing product reliability.

Trigger Device Type: SCR

Using SCR as the trigger device provides stability and reliability in controlling the circuit.

Maximum RMS On-state Current: 5 A

Capable of handling 5A RMS current, suitable for medium power applications.

Maximum DC Gate Trigger Voltage: 1.2 V

Low gate trigger voltage minimizes power consumption and enhances efficiency.

Repetitive Peak Off-state Voltage: 600 V

Withstands up to 600V off-state voltage, ensuring safety and durability.

Minimum Critical Rate of Rise of Off-state Voltage: 10 V/us

Can handle rapid changes in off-state voltage, making it responsive in various scenarios.

Maximum Holding Current: 8 mA

Capable of maintaining current flow up to 8 mA, ensuring stability in the circuit.

Nominal Circuit Commutated Turn-off Time: 7.7 us

Quick turn-off time of 7.7 us ensures fast response and control in the circuit.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TIC106M attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Nominal Circuit Commutated Turn-off Time:

7.7 us

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1.2 V

Maximum Holding Current:

8 mA

Maximum Leakage Current:

.4 mA

Non Repetitive Peak On-state Current:

30 A

No. of Elements:

1

Maximum On-state Current:

3.2 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

5 A

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TIC106M Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-14-425-3782, 5961144253782

NIIN

144253782

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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