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2N3562

Texas Instruments

2N3562 by Texas Instruments

2N3562 by Texas Instruments is a Silicon Controlled Rectifier with max on-state current of 1.6A, non-repetitive peak on-state current of 18A, and max DC gate trigger voltage of 0.8V. It is used in applications requiring SCR technology for power control in circuits with operating temperatures ranging from -60 to 155°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 3,043 parts In-Stock

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Vyrian

USA . 2,077 parts In-Stock

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Parana Technologies

USA . 128 parts In-Stock

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$4.013

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$4.478

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128

$4.013

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$4.478

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DigiPath Technology Company

USA . 1,113 parts In-Stock

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$4.419

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$4.065

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ChromeModa Solutions

Germany . 3,578 parts In-Stock

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$4.509

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$3.697

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IDEA Electronic Components Group

UK . 459 parts In-Stock

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$4.509

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$4.058

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459

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AZTECH Wire

Italy . 798 parts In-Stock

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$6.158

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798

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Ampacity Inc.

Singapore . 1,185 parts In-Stock

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$13.100

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One Stop Electronics

USA . 1,026 parts In-Stock

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$15.100

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Semicontronic

India . 752 parts In-Stock

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$30.100

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$29.348

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$29.197

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752

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Native Components

USA . 724 parts In-Stock

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Corohmni

South Africa . 388 parts In-Stock

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Northwest PG Solutions

USA . 370 parts In-Stock

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Corphita

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Overview

Unleash the power of technology with the 2N3562 SCR by Texas Instruments. Crafted with precision and expertise, this Silicon Controlled Rectifier is designed to deliver exceptional performance and reliability. Perfect for a wide range of applications, from industrial machinery to consumer electronics, this product offers unmatched value and benefits to customers. Trust in Texas Instruments to provide you with the quality and innovation you deserve.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for precise and efficient control of the SCR, making it suitable for a variety of applications.

Non Repetitive Peak On-state Current: 18 A

High peak on-state current rating ensures the SCR can handle momentary high current surges without damage, increasing reliability.

Maximum On-state Current: 1.6 A

Suitable for applications requiring medium current handling capabilities.

Maximum Leakage Current: 0.1 mA

Low leakage current means minimal power loss when the SCR is in the off-state, improving energy efficiency.

Maximum Operating Temperature: 155 °C

Wide operating temperature range allows for use in high-temperature environments, increasing versatility.

Trigger Device Type: SCR

Being an SCR (Silicon Controlled Rectifier), this product offers precise and reliable switching performance.

Minimum Operating Temperature: -60 °C

Wide operating temperature range allows for use in low-temperature environments, increasing versatility.

Maximum DC Gate Trigger Voltage: 0.8 V

Low gate trigger voltage requirement makes it easy to drive the SCR, enhancing compatibility with control circuitry.

Repetitive Peak Off-state Voltage: 200 V

Sufficient off-state voltage rating ensures that the SCR can withstand voltage spikes without breakdown, improving reliability.

Maximum Holding Current: 5 mA

Holding current specification ensures the SCR remains in the on-state once triggered, adding to the stability of the application.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N3562 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

18 A

Maximum On-state Current:

1.6 A

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N3562 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-039-8729, 5961010398729

NIIN

010398729

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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