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2N3560

Texas Instruments

2N3560 by Texas Instruments

2N3560 by Texas Instruments is a Silicon Controlled Rectifier with Max On-state Current of 1.6A, Trigger Voltage of 0.8V, and Operating Temp range from -60 to 155 °C. It's used in applications requiring precise gate trigger current control like power supplies and motor controls.

Median Price

$20.240

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 44 parts In-Stock

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$20.240

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Vyrian

USA . 5,165 parts In-Stock

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Digiode

USA . 2,611 parts In-Stock

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ECAB

Sweden . 16 parts In-Stock

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Electronic Expediters

USA . 15 parts In-Stock

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PUI

USA . 4 parts In-Stock

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First Choice Components Inc.

USA . 3 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 823 parts In-Stock

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$1.149

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823

$1.149

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Northwest PG Solutions

USA . 928 parts In-Stock

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$1.264

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928

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Parana Technologies

USA . 377 parts In-Stock

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$3.977

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$4.446

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ChromeModa Solutions

Germany . 6,320 parts In-Stock

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$4.469

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$3.665

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IDEA Electronic Components Group

UK . 2,186 parts In-Stock

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$4.469

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$4.022

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AZTECH Wire

Italy . 879 parts In-Stock

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$16.049

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One Stop Electronics

USA . 1,063 parts In-Stock

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$22.100

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Corphita

USA . 2,953 parts In-Stock

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DigiPath Technology Company

USA . 403 parts In-Stock

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$4.029

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Overview

Unlock a world of possibilities with the Texas Instruments 2N3560 Silicon Controlled Rectifier. As a renowned manufacturer in the industry, Texas Instruments delivers superior quality and reliability in every product. The 2N3560 is ideal for applications requiring precise control and efficient power management. Experience seamless performance with a maximum DC Gate Trigger Current of 0.2 mA and a non-repetitive peak on-state current of 18 A. Trust in Texas Instruments to deliver cutting-edge technology that exceeds expectations and enhances your electronic projects. Elevate your designs with the unmatched value and benefits of the 2N3560 SCR.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current ensures efficient triggering and control of the SCR, making this product suitable for applications requiring precise control.

Non Repetitive Peak On-state Current: 18 A

High peak on-state current capability allows the SCR to handle short-term high current loads, making it suitable for applications with occasional high-power requirements.

Maximum On-state Current: 1.6 A

The maximum on-state current rating of 1.6 A ensures that the SCR can safely handle continuous current loads up to this value, making it suitable for a wide range of general purpose applications.

Maximum Leakage Current: 0.1 mA

Low leakage current minimizes power wastage and ensures the SCR operates efficiently, making this product a cost-effective choice for energy-sensitive applications.

Maximum Operating Temperature: 155 °C

High maximum operating temperature of 155°C allows the SCR to withstand high temperature environments, making it ideal for industrial applications that require reliable performance in harsh conditions.

Trigger Device Type: SCR

Being an SCR (Silicon Controlled Rectifier), this product offers precise control over the triggering process, making it suitable for applications requiring accurate voltage regulation and power control.

Minimum Operating Temperature: -60 °C

Low minimum operating temperature of -60°C ensures that the SCR can function effectively in cold environments, making it suitable for applications in low-temperature conditions.

Maximum DC Gate Trigger Voltage: 0.8 V

Low gate trigger voltage allows for efficient triggering of the SCR with minimal input power, making this product suitable for low-power applications where energy efficiency is a priority.

Repetitive Peak Off-state Voltage: 60 V

With a repetitive peak off-state voltage of 60 V, this SCR can handle moderate voltage levels, making it suitable for a wide range of voltage regulation and control applications.

Maximum Holding Current: 5 mA

High holding current rating of 5 mA ensures that the SCR remains in the on-state after the trigger signal is removed, making it suitable for applications where continuous current flow is required.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N3560 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

18 A

Maximum On-state Current:

1.6 A

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

60 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N3560 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-466-1472, 5961014661472

NIIN

014661472

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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