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2N3558

Texas Instruments

2N3558 by Texas Instruments

2N3558 by Texas Instruments is a Silicon Controlled Rectifier with max. DC Gate Trigger Current of 0.2 mA, Non Repetitive Peak On-state Current of 18 A, and Max. On-state Current of 1.6 A. It operates b/w -60 to 155 °C and has a Repetitive Peak Off-state Voltage of 200 V. Ideal for applications requiring precise current control in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 8,498 parts In-Stock

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Digiode

USA . 1,090 parts In-Stock

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Electronic Expediters

USA . 45 parts In-Stock

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Native Components

USA . 48 parts In-Stock

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$0.171

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$0.164

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Northwest PG Solutions

USA . 1,077 parts In-Stock

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$0.188

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$0.166

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One Stop Electronics

USA . 872 parts In-Stock

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$3.100

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872

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Parana Technologies

USA . 231 parts In-Stock

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$4.011

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$4.476

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$4.011

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DigiPath Technology Company

USA . 680 parts In-Stock

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$4.417

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$4.064

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$4.417

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ChromeModa Solutions

Germany . 5,700 parts In-Stock

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$4.507

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$3.696

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IDEA Electronic Components Group

UK . 551 parts In-Stock

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$4.507

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$4.056

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AZTECH Wire

Italy . 347 parts In-Stock

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$7.156

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Corphita

USA . 2,141 parts In-Stock

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Overview

Unleash the power of Texas Instruments with the 2N3558 Silicon Controlled Rectifier! This high-quality product boasts a reliable performance and durability, making it perfect for a wide range of applications. From industrial machinery to consumer electronics, this SCR delivers exceptional value and efficiency. Trust Texas Instruments for cutting-edge technology that exceeds expectations. Elevate your projects with the 2N3558 and experience the superior quality that only TI can provide.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current ensures efficient use of gate signal, making this product energy efficient.

Non Repetitive Peak On-state Current: 18 A

High peak on-state current allows for handling of larger loads, making this product suitable for applications requiring high current capacity.

Maximum On-state Current: 1.6 A

With a maximum on-state current of 1.6 A, this product can effectively handle medium to high power applications.

Maximum Leakage Current: 0.02 mA

Low leakage current ensures minimal power loss during standby or off-states, improving overall efficiency.

Maximum Operating Temperature: 155 °C

High maximum operating temperature makes this product suitable for use in various industrial environments with elevated temperatures.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier (SCR), this product offers precise control over current flow, making it ideal for applications requiring accurate switching.

Minimum Operating Temperature: -60 °C

Low minimum operating temperature allows for reliable performance even in extremely cold conditions, expanding the product's versatility.

Maximum DC Gate Trigger Voltage: 0.7 V

Low gate trigger voltage ensures minimal power consumption during triggering, contributing to energy efficiency.

Repetitive Peak Off-state Voltage: 200 V

With a high repetitive peak off-state voltage, this product can withstand voltage spikes and fluctuations, ensuring robust performance.

Maximum Holding Current: 3 mA

High holding current enables the SCR to remain in the on-state even after the gate signal is removed, providing stability in applications with continuous current flow requirements.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N3558 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.7 V

Maximum Holding Current:

3 mA

Maximum Leakage Current:

.02 mA

Non Repetitive Peak On-state Current:

18 A

Maximum On-state Current:

1.6 A

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N3558 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-519-3485, 5961005193485

NIIN

005193485

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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