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TT162N14KOFHPSA1

Infineon Technologies

TT162N14KOFHPSA1 by Infineon Technologies

Infineon's TT162N14KOFHPSA1 is a Silicon Controlled Rectifier with 1400V repetitive peak reverse voltage and 260A max RMS on-state current. It features series connected, center tap configuration and is UL recognized. Ideal for high-power applications requiring precise gate trigger control.

Median Price

$154.988

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

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$154.988

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50

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Vyrian

USA . 4,842 parts In-Stock

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Digiode

USA . 247 parts In-Stock

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247

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Modulus Dynamics

Lithuania . 2,700 parts In-Stock

1+ parts

$2.582

100+ parts

$2.479

1k+ parts

$2.375

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-

2,700

$2.582

$2.479

$2.375

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Corohmni

South Africa . 1,155 parts In-Stock

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$2.966

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Aztec Data Supply Inc.

USA . 14,264 parts In-Stock

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$4.700

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$4.700

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Ampacity Inc.

Singapore . 743 parts In-Stock

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$9.100

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743

$9.100

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AZTECH Wire

Italy . 879 parts In-Stock

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$12.541

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879

$12.541

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Component Stockers USA

USA . 515 parts In-Stock

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$99.990

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Argo Parts USA

USA . 3,211 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$151.888

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$147.238

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$144.138

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$144.138

Corphita

USA . 495 parts In-Stock

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495

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Microchip USA

USA . 268 parts In-Stock

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Perfect Parts

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Overview

Unleash the power of reliable and high-quality technology with the TT162N14KOFHPSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-notch Silicon Controlled Rectifiers that provide exceptional performance and durability. Whether you're in need of a dependable solution for industrial applications or power electronics, this SCR offers maximum value with its impressive features and benefits. Trust in Infineon to deliver excellence and innovation with the TT162N14KOFHPSA1.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 150 mA

The low trigger current allows for efficient and reliable operation of the SCR.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

The series connected configuration with center tap and 2 elements allows for specific applications that require this setup.

Repetitive Peak Reverse Voltage: 1400 V

The high repetitive peak reverse voltage ensures the SCR can handle high voltage applications effectively.

No. of Terminals: 7

Having 7 terminals provides flexibility in the connection options and allows for various configurations to be implemented.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier ensures reliable and precise control over the switching of the device.

Maximum RMS On-state Current: 260 A

The high RMS on-state current rating enables the SCR to handle high current loads without issues.

Repetitive Peak Off-state Voltage: 1400 V

The high repetitive peak off-state voltage ensures the SCR can withstand high voltage applications and perform consistently.

Reference Standard: UL RECOGNIZED

Being UL recognized indicates that the SCR meets specific safety and quality standards, providing assurance of its reliability and performance.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TT162N14KOFHPSA1 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Infineon Technologies

Specs

Case Connection:

Maximum DC Gate Trigger Current:

150 mA

JESD-30 Code:

R-XUFM-X7

No. of Elements:

2

No. of Terminals:

7

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

260 A

Reference Standard:

UL RECOGNIZED

Repetitive Peak Off-state Voltage:

1400 V

Repetitive Peak Reverse Voltage:

1400 V

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TT162N14KOFHPSA1 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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