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X0403MF1AA2

STMicroelectronics

X0403MF1AA2 by STMicroelectronics

X0403MF1AA2 by STMicroelectronics is a SCR with 600V repetitive peak reverse voltage, 25A non-repetitive peak on-state current, and 0.8V max DC gate trigger voltage. It is used in applications requiring reliable power control such as motor drives, lighting controls, and industrial equipment due to its high performance and durability.

Median Price

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Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,638 parts In-Stock

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7,638

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Anansix

USA . 2,790 parts In-Stock

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2,790

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Digiode

USA . 1,467 parts In-Stock

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1,467

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ComSIT Distribution GmbH

Germany . 1,248 parts In-Stock

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1,248

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J2 Sourcing AB

Sweden . 215 parts In-Stock

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215

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ComSIT USA

USA . 49 parts In-Stock

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49

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Nova Conductors

Japan . 47 parts In-Stock

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47

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ACDS - Activité Composants Distribution Service

France . 40 parts In-Stock

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Zilex Electronics Inc.

Canada . 24 parts In-Stock

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LittleDiode

UK . 3 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,078 parts In-Stock

1+ parts

$1.929

100+ parts

-

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$1.736

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1,078

$1.929

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$1.736

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Corohmni

South Africa . 10 parts In-Stock

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$3.413

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10

$3.413

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MKK Technologies

India . 1,934 parts In-Stock

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$3.628

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1,934

$3.628

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DigiPath Technology Company

USA . 1,934 parts In-Stock

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$3.628

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1,934

$3.628

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Ampacity Inc.

Singapore . 133 parts In-Stock

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$4.100

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133

$4.100

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Aztec Data Supply Inc.

USA . 3,568 parts In-Stock

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$4.530

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$4.530

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AZTECH Wire

Italy . 440 parts In-Stock

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$11.400

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$11.400

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Semicontronic

India . 831 parts In-Stock

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$25.100

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$24.472

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$24.347

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831

$25.100

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$24.347

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Kepictronics

USA . 15,000 parts In-Stock

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Perfect Parts

USA . 4,891 parts In-Stock

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Argo Parts USA

USA . 3,014 parts In-Stock

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Corphita

USA . 2,058 parts In-Stock

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Parana Technologies

USA . 1,416 parts In-Stock

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$2.307

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$2.307

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Continental Prestige Electronics

USA . 947 parts In-Stock

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947

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Bastille Electronics

Australia . 50 parts In-Stock

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50

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Overview

Unleash the power of innovation with the X0403MF1AA2 by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-notch quality and reliability in their Silicon Controlled Rectifiers (SCR). This versatile product is ideal for a wide range of applications, offering customers unmatched performance and efficiency. Trust in STMicroelectronics to provide you with the value, benefits, and advantages you need to take your projects to the next level. Elevate your designs with the X0403MF1AA2 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the product lightweight and durable, ensuring it can withstand various environments.

Maximum DC Gate Trigger Current: 0.2 mA

A low DC gate trigger current of 0.2 mA ensures efficient operation and minimal power consumption, making the product energy-efficient.

Configuration: SINGLE

The single configuration simplifies the installation process and reduces the complexity of the circuit design.

Repetitive Peak On-state Current: 25 A

The high repetitive peak on-state current of 25 A allows the product to handle heavy loads effectively, making it suitable for various applications.

Maximum On-state Current: 2.4 A

With a maximum on-state current of 2.4 A, the product can reliably conduct current while maintaining stable operation.

Repetitive Peak Reverse Voltage: 600 V

The high repetitive peak reverse voltage of 600 V provides protection against reverse polarity voltage, enhancing the product's reliability.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C allows the product to operate in elevated temperature environments without compromising performance.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures the product can function in cold conditions, making it versatile for various applications.

Maximum RMS On-state Current: 1.35 A

With a maximum RMS on-state current of 1.35 A, the product can handle continuous AC currents efficiently, making it suitable for long-duration applications.

Repetitive Peak Off-state Voltage: 600 V

The high repetitive peak off-state voltage of 600 V provides excellent isolation and protection during off-state operation, ensuring the safety of connected devices.

Maximum Holding Current: 5 mA

The maximum holding current of 5 mA ensures the product remains in the on-state after the gate trigger signal is removed, maintaining continuous operation.

Nominal Circuit Commutated Turn-off Time: 50 us

With a nominal circuit commutated turn-off time of 50 microseconds, the product can switch off quickly and efficiently, reducing heat generation and improving overall performance.

Technical Specifications

Silicon Controlled Rectifiers (SCR) X0403MF1AA2 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Nominal Circuit Commutated Turn-off Time:

50 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

30 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Maximum Leakage Current:

.2 mA

Non Repetitive Peak On-state Current:

25 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

2.4 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

1.35 A

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

X0403MF1AA2 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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