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X0403BE

STMicroelectronics

X0403BE by STMicroelectronics

X0403BE by STMicroelectronics is a single SCR in a rectangular plastic/epoxy package, ideal for power control applications. It features a max on-state current of 2.4 A, non-repetitive peak on-state current of 25 A, and operates b/w -45 °C to 125°C. This device ensures reliable performance with low gate trigger currents and high voltage ratings.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,155 parts In-Stock

1+ parts

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3,155

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Vyrian

USA . 1,691 parts In-Stock

1+ parts

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1,691

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Anansix

USA . 512 parts In-Stock

1+ parts

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512

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,703 parts In-Stock

1+ parts

$4.348

100+ parts

-

1k+ parts

$3.913

10k+ parts

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1,703

$4.348

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$3.913

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MKK Technologies

India . 589 parts In-Stock

1+ parts

$8.176

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589

$8.176

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DigiPath Technology Company

USA . 589 parts In-Stock

1+ parts

$8.176

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589

$8.176

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Corphita

USA . 968 parts In-Stock

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968

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Parana Technologies

USA . 298 parts In-Stock

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$5.199

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298

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$5.199

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Overview

Unlock superior performance with the X0403BE from STMicroelectronics, a leading name in semiconductor innovation. This Silicon Controlled Rectifier (SCR) offers unmatched reliability and efficiency, making it ideal for power control and automation applications. With its robust design and versatile operating range, the X0403BE ensures seamless integration into your projects, enhancing stability while minimizing energy loss. Elevate your designs with proven quality and performance that you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and resistance to environmental factors, making it suitable for a variety of applications.

Maximum DC Gate Trigger Current: 0.2 mA

A low gate trigger current requirement enables efficient operation with minimal power consumption.

Configuration: SINGLE

Single configuration provides simplicity in integration and ease of use in circuits.

Non Repetitive Peak On-state Current: 25 A

High non-repetitive peak current rating allows the device to handle significant loads during transient conditions without damage.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient layout and space optimization on PCBs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide stability and secure mechanical connections, suitable for robust applications.

Maximum On-state Current: 2.4 A

The maximum on-state current rating allows for reliable performance in various applications that demand continuous current.

Maximum Leakage Current: 0.2 mA

Low leakage current reduces power losses and enhances overall energy efficiency of the device.

Repetitive Peak Reverse Voltage: 200 V

High reverse voltage tolerance ensures reliable operation in high-voltage applications, improving device longevity.

No. of Terminals: 3

Three-terminal design increases versatility, allowing for flexible circuit configurations and application designs.

Package Style (Meter): FLANGE MOUNT

Flange mounting style allows for secure attachment and enhances thermal conduction, ensuring efficient heat dissipation.

Maximum Operating Temperature: 125 °C

High operating temperature capability enables use in demanding environments, enhancing application range.

Trigger Device Type: SCR

SCR technology facilitates efficient switching and control in power electronics applications, providing robust performance.

Minimum Operating Temperature: -45 °C

Wide operating temperature range makes this SCR suitable for use in extreme environmental conditions.

Terminal Finish: MATTE TIN

Matte tin plating provides good solderability and corrosion resistance, ensuring long-term reliability.

Terminal Position: SINGLE

Single terminal position simplifies layout and connections in designs, reducing complexity.

Maximum RMS On-state Current: 4 A

Ability to handle higher RMS currents ensures reliable performance under normal operating conditions.

Maximum DC Gate Trigger Voltage: 0.8 V

Low trigger voltage demand improves circuit design flexibility and enhances compatibility with various control circuits.

Repetitive Peak Off-state Voltage: 200 V

This voltage rating provides a robust operating capability in circuits where high voltage off-state conditions are encountered.

Minimum Critical Rate of Rise of Off-state Voltage: 30 V/us

A high critical rate of rise helps in fast switching applications, improving system performance and efficiency.

Maximum Holding Current: 5 mA

Low holding current requirement ensures simple turn-off in applications, allowing for effective control strategies.

Nominal Circuit Commutated Turn-off Time: 50 μs

Fast turn-off time enhances system responsiveness, making the device ideal for rapid switching applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) X0403BE attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Nominal Circuit Commutated Turn-off Time:

50 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

30 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-202

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

.2 mA

Non Repetitive Peak On-state Current:

25 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

2.4 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

X0403BE Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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