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X0402ME1AA2

STMicroelectronics

X0402ME1AA2 by STMicroelectronics

X0402ME1AA2 by STMicroelectronics is a Silicon Controlled Rectifier with 2.1V On-state Voltage, 33A Peak On-state Current, and -45 to 125 °C Operating Temperature. Ideal for applications requiring high current switching capabilities in industrial electronics and power control systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,597 parts In-Stock

1+ parts

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3,597

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Anansix

USA . 1,140 parts In-Stock

1+ parts

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1,140

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Digiode

USA . 996 parts In-Stock

1+ parts

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996

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 290 parts In-Stock

1+ parts

$3.089

100+ parts

-

1k+ parts

$2.780

10k+ parts

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290

$3.089

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$2.780

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MKK Technologies

India . 230 parts In-Stock

1+ parts

$5.809

100+ parts

-

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230

$5.809

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DigiPath Technology Company

USA . 230 parts In-Stock

1+ parts

$5.809

100+ parts

-

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230

$5.809

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Corphita

USA . 4,117 parts In-Stock

1+ parts

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4,117

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Parana Technologies

USA . 1,318 parts In-Stock

1+ parts

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100+ parts

$3.694

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1,318

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$3.694

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Overview

Elevate your electronic designs with the X0402ME1AA2 by STMicroelectronics, a top-tier Silicon Controlled Rectifier that boasts unparalleled quality and reliability. With a maximum on-state voltage of 2.1V and a non-repetitive peak on-state current of 33A, this SCR is ideal for a wide range of applications. Trust in STMicroelectronics' renowned expertise in semiconductor manufacturing to deliver a product that exceeds expectations. Experience the value and benefits of the X0402ME1AA2 firsthand and take your projects to the next level.

Feature Benefit Bullets

Maximum On-state Voltage: 2.1 V

Low on-state voltage means reduced power loss and higher efficiency, making this product suitable for applications where energy efficiency is a priority.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current ensures reliable and precise triggering, enhancing the overall performance and stability of the product.

Non Repetitive Peak On-state Current: 33 A

High peak on-state current capability allows this product to handle heavy loads or transient surges, making it suitable for demanding applications.

Maximum On-state Current: 4 A

Sufficient on-state current rating enables this product to handle moderate to high current loads without overheating, ensuring reliable operation.

Maximum Leakage Current: 0.2 mA

Low leakage current reduces wasted power and improves overall efficiency, making this product a cost-effective choice for long-term use.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows this product to function effectively in various environments, offering flexibility for different applications.

Maximum DC Gate Trigger Voltage: 0.8 V

Low gate trigger voltage requirement ensures compatibility with a wide range of control circuits, making this product versatile and easy to integrate.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage rating provides sufficient insulation and protection, making this product suitable for high-voltage applications where reliability is essential.

Minimum Critical Rate of Rise of Off-state Voltage: 30 V/us

Fast critical rate of rise of off-state voltage allows quick response to voltage fluctuations, making this product reliable and responsive in dynamic operating conditions.

Maximum Holding Current: 5 mA

Sufficient holding current ensures the SCR remains latched during operation, preventing unintentional turn-off and ensuring stable performance.

Technical Specifications

Silicon Controlled Rectifiers (SCR) X0402ME1AA2 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

30 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

Maximum Leakage Current:

.2 mA

Non Repetitive Peak On-state Current:

33 A

Maximum On-state Voltage:

2.1 V

Maximum On-state Current:

4 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

X0402ME1AA2 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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