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2N1842B

Texas Instruments

2N1842B by Texas Instruments

2N1842B by Texas Instruments is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 75mA, Non Repetitive Peak On-state Current of 150A, and Max On-state Current of 13A. It operates b/w -65°C to 125°C and has a Max Leakage Current of 1mA. Ideal for power control applications requiring SCR technology.

Median Price

$15.720

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 1,019 parts In-Stock

1+ parts

$15.720

100+ parts

$14.510

1k+ parts

$12.890

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1,019

$15.720

$14.510

$12.890

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Vyrian

USA . 5,384 parts In-Stock

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Digiode

USA . 4,523 parts In-Stock

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4,523

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 1,302 parts In-Stock

1+ parts

$0.100

100+ parts

$0.098

1k+ parts

$0.097

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-

1,302

$0.100

$0.098

$0.097

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Native Components

USA . 387 parts In-Stock

1+ parts

$0.558

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387

$0.558

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Northwest PG Solutions

USA . 1,003 parts In-Stock

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$0.613

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1,003

$0.613

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Parana Technologies

USA . 2,240 parts In-Stock

1+ parts

$2.495

100+ parts

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$2.985

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2,240

$2.495

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$2.985

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DigiPath Technology Company

USA . 426 parts In-Stock

1+ parts

$2.747

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426

$2.747

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IDEA Electronic Components Group

UK . 1,892 parts In-Stock

1+ parts

$2.803

100+ parts

-

1k+ parts

$2.523

10k+ parts

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1,892

$2.803

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$2.523

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ChromeModa Solutions

Germany . 1,830 parts In-Stock

1+ parts

$2.803

100+ parts

$2.298

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1,830

$2.803

$2.298

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One Stop Electronics

USA . 350 parts In-Stock

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$12.100

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350

$12.100

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AZTECH Wire

Italy . 855 parts In-Stock

1+ parts

$17.408

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855

$17.408

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Ampacity Inc.

Singapore . 431 parts In-Stock

1+ parts

$25.100

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431

$25.100

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Corphita

USA . 1,934 parts In-Stock

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1,934

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Corohmni

South Africa . 300 parts In-Stock

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300

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Overview

Elevate your electronic projects with the Texas Instruments 2N1842B Silicon Controlled Rectifier. Manufactured with top-notch quality, this SCR offers reliable performance and durability. Ideal for a wide range of applications, this component provides seamless operation in various electronic devices. Experience the value and benefits of using the 2N1842B, from its high DC Gate Trigger Current to its impressive On-state Current capabilities. Trust Texas Instruments for superior quality and innovation in every product.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 75 mA

Low gate trigger current allows for efficient and reliable triggering of the SCR, ensuring stable performance.

Non Repetitive Peak On-state Current: 150 A

High non-repetitive peak on-state current capability ensures the SCR can handle sudden surges in current without being damaged.

Maximum On-state Current: 13 A

With a maximum on-state current of 13 A, this SCR is suitable for a variety of applications requiring medium power handling capabilities.

Maximum Leakage Current: 1 mA

Low leakage current ensures minimal power loss in the off-state, leading to improved efficiency of the overall system.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows the SCR to be used in demanding environments without the risk of overheating.

Trigger Device Type: SCR

Being an SCR, this device provides precise control over current flow and can easily switch between on and off states.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures the SCR can function reliably even in extremely cold conditions.

Maximum DC Gate Trigger Voltage: 3.5 V

Low gate trigger voltage requirements make it easier to drive the SCR, reducing the complexity of the control circuitry.

Repetitive Peak Off-state Voltage: 25 V

Repetitive peak off-state voltage rating of 25 V allows the SCR to withstand reverse voltage spikes, enhancing the device's reliability.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1842B attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

75 mA

Maximum DC Gate Trigger Voltage:

3.5 V

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

150 A

Maximum On-state Current:

13 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Repetitive Peak Off-state Voltage:

25 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N1842B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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